The fourth generation semiconductor project is coming! GAREN SEMI opens for business!

      On January 2, 2024, Hangzhou Xiaoshan Economic and Technological Development Zone Robot Town ushered in an exciting moment - Hangzhou GAREN SEMICONDUCTOR Co., Ltd. officially opened! This marks a new historical stage for the company, ushering in a "core" starting point, a new journey, new opportunities and new challenges. Zhang Hui, Chairman and general manager of the company, and Xia Ning, technical director, on behalf of all the employees of the company, extended a warm welcome to the leaders, guests and partners coming from afar.

      GAREN SEMICONDUCTOR will take this opening ceremony as a new starting point, continue to uphold the concept of "co-creation, leadership, win-win", and strive to improve its technical strength and product competitiveness. In the future, GAREN SEMICONDUCTOR will firmly grasp the historical opportunity of the development of the semiconductor industry, based on the major needs of the country, and deepen the continuous innovation of the Gallium Oxide upstream industry chain, committed to providing high-quality semiconductor Gallium Oxide products for global customers, and help the national "carbon neutral" and "carbon peak" development goals.

      Hangzhou GAREN SEMICONDUCTOR Co., Ltd. is a scientific and technological enterprise focusing on R&D, production and sales of the fourth generation of Gallium Oxide and other ultra-wide band gap semiconductor single crystal substrate materials. Relying on the State Key Laboratory of Silicon Materials of Zhejiang University, Hangzhou International Science and Technology Innovation Center of Zhejiang University and Zhejiang Power Semiconductor Materials and Devices Laboratory, the company has formed a R & D and production team with Academician Yang Deren of Chinese Academy of Sciences as the chief consultant. The company has mastered a full set of key technologies including equipment development, thermal field design, crystal growth and crystal processing. It is expected to crack the "stuck neck" problem of Gallium Oxide materials.

Learn from good practices and absorb good experience

      After the Party and government delegation of Jilin Province People's Government went to Shanghai, Zhejiang, Jiangsu, Anhui, Tianjin, Shandong, Guangdong and other places to study and investigate, the main leaders of the provincial science and technology Department, Changbaishan Management Committee and Meihekou City who were with the delegation said that the good experience and good practices of advanced provinces and developed regions are worth learning from and learning from. It has provided new ideas and injected new impetus for the next development.

      Li Yan, secretary of the Party Group and director of the Provincial Department of Science and Technology, said that in the inspection activities, what felt the most was the surging vitality of scientific and technological innovation in advanced provinces and developed regions.

      "We have gained a lot from this expedition." "We signed framework agreements on science and technology innovation cooperation with Anhui and Shandong provinces respectively. The team of Professor Wang Gang from Sun Yat-sen University was introduced to focus on key technology research of Gallium Oxide special multi-chip MOCVD mass production equipment for heteroepitaxy. Reached cooperation intention with Zhongshan Dehua Chip Technology Co., Ltd. on gallium semiconductor energy chip project -- photovoltaic chip and power electronic chip project; Jilin Provincial Institute of Science and Technology Innovation signed a memorandum of cooperation with Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, to introduce 5 teams and 7 project achievements in our province."

      Li Yan said that the province has obvious advantages in science and education, with 66 universities and 102 research institutes, as well as national strategic science and technology forces such as Jilin University, Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences and Changchun Institute of Applied Chemistry of the Chinese Academy of Sciences. "In the next step, we will fully integrate and optimize science and education innovation resources, promote industrial innovation with scientific and technological innovation, focus on key areas such as modern industrial system, new industrialization, modern large agriculture and digital economy to carry out major core technology research, build a high-end platform system led by 'two laboratories ' and' two research institutes ', and promote the transformation and industrialization of more excellent scientific and technological achievements in the province." Li Yan said.

The School of Integrated Circuit Science and Engineering of Nanjing University of Posts and Telecommunications has been approved for two key projects supported by the Joint Fund of the National Natural Science Foundation in 2023

      On Nov 21, the National Natural Science Foundation of China (NSF) announced the evaluation results of key projects supported by the National Natural Science Foundation (NSF) Joint Fund in 2023. The project "Research on General Test Model and Key Technology of Highly Reliable Multi-core Integrated System" chaired by Professor Guo Yufeng (grant amount 2.57 million yuan), and the project "Research on ultra-wide band gap oxide semiconductor Doping Regulation and Optoelectronic Devices" chaired by Professor Tang Weihua (grant amount 2.59 million yuan) were approved. This makes our institute hit a new high in the number of approved joint fund key support projects and funds in a single year, and also makes our Institute the largest number of approved joint fund key support projects in the school this year.

      The Research on Doping Regulation and Optoelectronic Devices of ultra-wide band gap oxide Semiconductors hosted by Professor Tang Weihua is aimed at Gallium Oxide semiconductor materials, a typical representative of the fourth generation of ultra-wide band gap semiconductors, aiming at the current scientific problems of Gallium Oxide continuous band regulation and stable bipolar doping. It is intended to construct Gallium Oxide based ultra-wide band gap high-quality homogenous PN junction based on Gallium Oxide by alloying preparation of N type Gallium Oxide and ion doping growth of P type Gallium Oxide based on metallic organic chemical deposition and develop high-performance sunblind deep ultraviolet photoelectric sensor and MOS transistor. The innovation results of this project are expected to provide theoretical and technical support for the development of ultra-wide band gap oxide semiconductor devices, and provide important support for China to win the international leading position in the field of ultra-wide band gap semiconductors.

The ultra-wide band gap oxide semiconductor optoelectronic devices have important application prospects

      The Joint Fund, jointly funded by the National Natural Science Foundation of China and local governments and enterprises, aims to give full play to the guiding role of the National Natural Science Foundation, attract and integrate social resources into basic research, promote cooperation between relevant departments, enterprises, universities and scientific research institutions, and train scientific and technical talents. To promote China's independent innovation capability in relevant fields, industries and regions.

Tsinghua University releases the "Top Ten Transformative Technologies that will Change the Future" that young people are most concerned about in 2023

      In order to create a good science and technology innovation ecology, encourage the majority of young students to aim at the forefront of the industry, in-depth exploration of cross-cutting fields, Tsinghua University " Tanzhen Technology Review" carried out the 2023 "Young people are most concerned about the change of the future ten transformative technologies" list selection activities, attracted a total of more than 9,000 Tsinghua teachers and students to participate in the vote.

      Among them, the fourth-generation semiconductor materials of Gallium Oxide are fortunate to be on the list.

Fourth generation semiconductor materials

List reason: Focus on the chip neck link, leading the innovation of semiconductor materials

      Introduction: "With the continuous development of electronic information technology, semiconductor materials have also experienced several generations of change, the first generation of semiconductor materials laid the foundation of the microelectronics industry, the second generation of semiconductor materials laid the foundation of the communication industry, the current Silicon Carbide, Gallium Nitride as the representative of the third generation of semiconductor materials have a high voltage, high temperature resistance and other superior performance, mainly used in power devices and radio frequency devices."Fourth-generation semiconductor materials such as Gallium Oxide, Aluminum Nitride, and Diamond have excellent physical and chemical properties, good electrical conductivity, and luminous properties, and have broad application prospects in power and RF semiconductor devices, ultraviolet detectors, gas sensors, and optoelectronic devices."

" Technology Innovation China" technology roadshow - Intelligence Union Foshan Special event was successfully held!

      On October 31, " Technology Innovation China " technology roadshow -- Intelligence Union Foshan Special event was successfully held! Nearly 500 people watched the event online. The event aims to gather innovative resources all the world, including high-quality hard science and technology projects, speculative institutions, industrial capital, banks, etc. ‍ to promote the transformation of scientific and technological achievements in Foshan City through in-depth exchanges.

      High-level talent projects such as "Ewen Intelligent Carbon Meter - Carbon Emission intelligent Monitoring and Big Data Management and control System based on Industrial Internet Identification", "Research and Application of vision detection and analysis technology based on Artificial intelligence", "Industrialization project of high-precision positioning technology based on Beidou Third Generation System", "ultra-wide band gap semiconductor Gallium Oxide materials and MOCVD equipment" participated in the roadshow.

Project 4: ultra-wide band gap semiconductor Gallium Oxide materials and MOCVD equipment

      Taking the fourth generation ultra-wide band gap semiconductor Gallium Oxide epitaxy material as its core advantage, this project carried out source innovation in the epitaxy growth of Gallium Oxide material, equipment design and research and development, and developed the world's first Gallium Oxide MOCVD mass production intelligent equipment with excellent repeatability, uniformity and low defect rate and supporting epitaxy growth process. In the world, it took the lead in obtaining large-size and high-quality Gallium Oxide epitaxy materials, and took the lead in completing chip verification in power devices, breaking the patent monopoly of the United States and Japan in the chip material side, and filling the domestic gap.