
【Member News】Sunwise Semiconductor won a strategic investment agreement of 100 million yuan
日期:2024-02-08阅读:160
On February 3, Ruiyue Investment officer micro-published that Ruiyue Investment and Fujian Sunwise Semiconductor Technology Co., LTD. (hereinafter referred to as "Sunwise Semiconductor") signed a strategic investment agreement.
Ruiyue Investment as the exclusive strategic investor of Sunwise Semiconductor, Sunwise Semiconductor strategic investment of RMB 100 million, to help it achieve an annual output of 750,000 Gallium Oxide epitaxial wafers, 1.2 billion filter chips completed production.
Present at the signing ceremony are: Rui Yue Holding Group Chairman Wang Lirong, General manager Chen Chao, Chief Investment officer Li Zilong; Wang Mengyuan, chairman of Sunwise Semiconductor, chief scientist, Professor of Sun Yat-sen University, Professor Wang Gang, deputy general manager Sun Hui. Wang Lirong, chairman of Ruiyue Holding Group, and Wang Mengyuan, chairman of Sunwise Semiconductor, signed on behalf of the parties respectively. Chen Chao, general manager of Rui Yue Holding Group, presided over the signing ceremony.
Mr. Lou Yanfeng, member of Party group and deputy director of Shenzhen Science and Technology Innovation Commission, attended the ceremony to witness the signing.
It is reported that Fujian Sunwise Semiconductor is a high-tech enterprise with the core technology of the whole chain of high-frequency bulk acoustic wave filter chip (BAW) in 5G communication and operates in IDM mode. The core technology is a bulk acoustic wave filter chip based on single crystal Gallium Oxide as piezoelectric material, with independent intellectual property rights. In terms of materials, design, manufacturing, equipment, etc., it has made a number of original breakthroughs, and has been authorized more than 100 domestic and international invention patents, and the key performance is more than 20% higher than that of similar foreign products. It has passed the verification of a number of well-known brand customers, effectively solving the problem of jam in the field of 5G radio frequency filter chips in China.
Based on the excellent piezoelectric characteristics of epsilon (ε) phase Gallium Oxide film material, the company is the first in the world to mass-produce superior quality Gallium Oxide based surface/bulk acoustic wave RF filter chip products. To this end, the company is building more than 30 ultra-wide band gap semiconductor RF chip and epitaxial chip production lines. Products focus on 5G/6G communication, intelligent Internet of Things and precise positioning and other application fields, will form a Gallium Oxide based acoustic frequency filter chip, radio frequency power electronics chip and other products with global competitiveness, is currently a Gallium Oxide based BAW filter chip independent mass production and delivery capabilities of the enterprise. Is committed to becoming the world's leading compound semiconductor R & D, manufacturing and service company.