【Domestic Papers】Preparation of High Light-trapping β-Ga₂O₃ Nanorod Films Via Thermal Oxidation of GaAs and Metal-organic Chemical Vapor Deposition

      Researchers from the Jilin University have published a dissertation titled "Preparation of high light-trapping β-Ga₂O₃ nanorod films via thermal oxidation of GaAs and metal-organic chemical vapor deposition " in Materials Science in Semiconductor Processing.

Abstract

      Monoclinic gallium oxide (β-Ga₂O₃) has attracted wide attention due to its low-cost single crystal and excellent optoelectronic properties. However, the low specific surface area and high defect density of β-Ga₂O₃ thin films result in weak light-matter interaction and poor crystal quality, seriously hindering their applications. In this article, the growth of high light-trapping β-Ga₂O₃ nanorod (NR) film on GaAs substrates by metal-organic chemical vapor deposition (MOCVD) is demonstrated. The GaAs substrates were pre-treated by thermal oxidation (TO) to produce a β-Ga₂O₃ seed layer. The effect of MOCVD growth conditions on the morphology of β-Ga₂O₃ NR films is investigated. The growth mechanism of β-Ga₂O₃ NR films is studied in detail. X-ray diffraction, Raman, and photoluminescence were employed to study the crystal and optical properties of β-Ga₂O₃ NR films. A significant light-trapping effect with a 40 % reduction in optical reflectance at the wavelength of 254 nm is observed. The results show that the β-Ga₂O₃ NR films exhibit strong light-matter interaction and have potential in optoelectronic applications.

Paper Link：https://doi.org/10.1016/j.mssp.2023.107912