【Domestic Papers】Enhancement of Photodetection Performance of Ga₂O₃/Si Heterojunction Solar-Blind Photodetector Using High Resistance Homogeneous Interlayer

      Researchers from the  Shanghai University have published a dissertation titled "Enhancement of photodetection performance of Ga₂O₃/Si heterojunction solar-blind photodetector using high resistance homogeneous interlayer " in Materials Today Physics.

Abstract

      Creating homojunctions using Ga₂O₃ material presents a significant challenge, primarily because of the inherent difficulty in achieving stable p-type Ga₂O₃. The pn heterojunctions based on n-Ga₂O₃ materials offer a promising alternative for developing solar-blind photodetectors. In this work, our strategy is to fabricate a n-Ga₂O₃/p-Si heterojunction solar-blind photodetector with interface layers of high resistance and low resistance through using a magnetron sputtering system. The results indicate that a Ga₂O₃ layer with high resistance as an interface layer contributes to broadening the width of space charge region of this pn heterojunction, resulting in the enhancement of photodetection responsivity (61.7 mA/W @-5 V). Furthermore, the pn heterojunction photodetector exhibits a photo-response to 254 nm UV light at zero bias voltage, showcasing robust stability. This suggests significant potential for applications in the challenging environments. The synergistic blend of the enhanced photodetector performance and the well-established technology of Si integrated circuits is generating considerable enthusiasm.

Paper Link：https://doi.org/10.1016/j.mtphys.2024.101380