【International Papers】Study of Ga₂O₃ Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range

      Researchers from the Ioffe Institute have published a dissertation titled "Study of Ga₂O₃ Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range" in Technical Physics Letters.

Abstract

      Study of Ga₂O₃ deposition by MOVPE using trimethylgallium and oxygen was performed in a wide temperature range. It was found that for Ga₂O₃ deposition rate vs temperature dependence is very close to the TMGa pyrolysis in nitrogen. Kinetically-limited range for these processes corresponds to 550–700°C, that is 150°C higher, then for GaN deposition in the same reactor.

Paper Link：https://doi.org/10.1134/S1063785023900807