【Member Papers】Enhancing the quality of homoepitaxial (-201) β-Ga₂O₃ thin film by MOCVD with in situ pulsed indium

      Researchers from the Xidian University have published a dissertation titled "Enhancing the quality of homoepitaxial (−201) β-Ga₂O₃ thin film by MOCVD with in situ pulsed indium " in Applied Physics Letters.

      This article innovatively uses pulsed metal-organic chemical vapor deposition (MOCVD) technology to optimize the quality of β-Ga₂O₃ thin films on (-201) β-Ga₂O₃ homo-substrate using indium pulse-assisted technology. The results demonstrate that the pulsed indium-assisted method, when compared with the traditional indium-assisted method, effectively suppresses the desorption of Ga₂O, enhances the flatness of the β-Ga₂O₃ film, and reduces the surface roughness from 34.8 nm to 0.94 nm. The optimized single crystalline β-Ga₂O₃ film was grown with pulsed-indium, and the full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curve was 30.42 arcsec, smaller than that of the continuous indium β-Ga₂O₃ (56.1 arcsec). In combination with the x-ray photoelectron spectroscopy (XPS) O1s split-peak fitting analysis, the relative content of oxygen vacancies in the film was significantly reduced by pulsed indium-assisted. The Hall mobility of films assisted by pulsed-indium is approximately 14 times higher than that of films assisted by traditional indium. The pulsed indium technology provides an idea for homoepitaxial growth of high quality β-Ga₂O₃ films.

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Paper Link：https://doi.org/10.1063/5.0189586