【World Express】Mitsubishi Electric will invest 900 billion yen in green projects over seven years to accelerate research and development of Gallium Oxide materials

      On March 26, at the Sustainable Development Initiative online conference held by Mitsubishi Electric, Mitsubishi Electric announced that it will invest in research and development of Gallium Oxide (Ga₂O₃), which is expected to be the next generation of semiconductors. Compared to Silicon Carbide (SiC) power semiconductors, which are mainly used in electric vehicles (EV), Mitsubishi Electric said the layout is "for expanding the market for higher voltages."

      Mitsubishi Electric said that from 2024 to 2030, the company will invest about 900 billion yen (equivalent to about 43 billion yuan) for the next generation of power semiconductors such as Silicon Carbide, Gallium Oxide, materials and product recycling, renewable energy and other green fields of research and development. In addition to energy-saving equipment and a new generation of power semiconductors, the company will also promote research and development in energy management and recycling of materials and products to expand the introduction of renewable energy. At the same time, the company also announced its goal of powering 100 percent of the electricity in its factories and offices with renewable and clean energy from non-fossil sources by fiscal year 2030.

Conducting an online press conference with President Kai Usuma

      Mitsubishi Electric has invested about 370 billion yen in research and development related to green projects in the three years to fiscal 2023. At the meeting, President Kai Usuma outlined his vision: "We want data innovation to enrich society and the environment while growing our business and achieving sustainable development."

      Details of the 900 billion yen in new investment will be determined later. In addition to new generation power semiconductors such as Silicon Carbide (SiC) and Gallium Oxide, the company will invest in energy conservation and electrification of equipment, recovery of carbon dioxide (CO₂) emissions from plants and power stations, and recycling of materials and products to create and expand the business.

      At this meeting, Mitsubishi Electric made it clear that it will invest in and begin full-scale research and development of Gallium Oxide power semiconductors. Compared with Silicon Carbide and Gallium Nitride (GaN), Gallium Oxide has a higher bandgap energy and is promising in applications that require particularly high voltage withstand cells, such as power infrastructure, renewable energy, and railways.

      In July 2023, Mitsubishi Electric has invested in Novel Crystal Technology (NCT), a company that manufactures Gallium Oxide substrates and epitaxial wafers for power semiconductors. Mitsubishi Electric now expects to accelerate the development of its superior energy efficient Gallium Oxide power semiconductors - Oxide Wafer - by combining its expertise in the design and manufacture of low-energy, high-reliability power semiconductors with Novel Crystal Technology's expertise in Gallium production.