【Conference Papers】CSPSD2024 Session 1: Focus on Silicon-based, Compound Power Device Design and Integrated Application Development

Zhao Junlei, Assistant Professor, Southern University of Science and Technology, "Ga-O Interatomic Potential Function and its Application"

      Zhao Junlei, Assistant Professor, Southern University of Science and Technology, made a keynote report on "Ga-O Interatomic Potential Function and its Application". Due to the high bonding complexity of Ga-O and the lack of accurate interatomic potential function, the existing computational simulation studies of the Ga-O-N system and the relatively mature Ga₂O₃ system are limited to first-principles calculations at the 100-atom level. However, the large-scale calculation system of more than 10,000 atoms is essential to reveal the mechanism of atomic-level dynamics. He highlights the Ga-O interatomic potential function developed by the team, which is suitable for large-scale simulation studies of multiphase symbiosis systems, and has important research significance for further exploration of Ga₂O₃ growth regulation mechanism and important structural properties, and also provides the necessary research basis for further exploration of Ga-O-N systems.

Xu Guangwei, Researcher, University of Science and Technology of China, "Gallium Oxide Vertical Power Semiconductor Devices"

      Xu Guangwei, Researcher, University of Science and Technology of China, made a keynote report on "Gallium Oxide Vertical Power Semiconductor Devices". Gallium Oxide vertical power semiconductor devices have the advantages of high-power density, low on-resistance, high-frequency, high-temperature stability, fast switching, etc., and have broad application prospects in high-frequency, high-power density and high-temperature power electronics applications. With the continuous improvement and maturity of manufacturing processes, the performance and reliability of Gallium Oxide vertical power devices have been significantly improved. Xu Guangwei, a researcher at the University of Science and Technology of China, made a keynote report on "Gallium Oxide Vertical Power Semiconductor Devices" and shared related research achievements and progress.

Han Shida, Engineer, China Electronics Technology Group Corporation Thirteenth Research Institute, "Research on High-power Gallium Oxide Schottky Diode"

      High-power Gallium Oxide Schottky Diodes have many advantages, such as high switching speed, low on-resistance, high-temperature stability, high power density, low leakage current and fast development cycle, and have a wide range of applications in high frequency, high power density, and high-temperature power electronics applications. Han Shida, an engineer of China Electronics Technology Group Corporation Thirteenth Research Institute, made a keynote report on "Research on High-power Gallium Oxide Schottky Diode" and shared the latest research results.

Wang Chenlu, Postdoc, Xidian University, "Research on High-voltage and High-power Gallium Oxide Transistors"

      Gallium Oxide transistors (Ga₂O₃ HEMT) have many excellent performances and are suitable for various high-power and high-voltage application scenarios. Wang Chenlu, a postdoc of Xidian University, made a keynote report on "Research on High-voltage and high-power Gallium Oxide Transistors" and shared relevant research achievements and progress.