【International Papers】Study of optical float-zone grown gallium oxide Schottky barrier diode

      Researchers from the Indian Institute of Science have published a dissertation titled "Study of optical float-zone grown gallium oxide Schottky barrier diode " in Semiconductor Science and Technology.

Abstract

      β−Ga₂O₃ based lateral Schottky barrier diodes are fabricated using Ni/Au as Schottky contact and Ti/Au as Ohmic contact. The Sn-doped β−Ga₂O₃  sample is grown by the optical float-zone technique. The effect of trenches, which are used for mesa isolation, on breakdown voltage is investigated. The device shows near-ideal characteristics in terms of built-in potential. The parasitic series and shunt resistances are extracted, and their dependency on temperature is established. Modeling of temperature-dependent reverse leakage current is demonstrated using the thermionic emission model, Poole–Frenkel emission model, and Fowler-Nordheim tunneling mechanism. The procedure to extract relevant parameters is explained in terms of bias and temperature dependency. The combined model shows excellent agreement with experimental data over a wide range of bias and temperature. The maximum electric field of 2.3 MV cm⁻¹ is achieved.

Paper Link：https://doi.org/10.1088/1361-6641/ad3d03