【Member News】The research team of Tianjin University of Technology successfully prepared 4-inch κ- and β- Ga₂O₃ heteroepitaxial films using HVPE

Wide bandgap semiconductor material Ga₂O₃ has great application potential in the fields of semiconductor power devices and optoelectronic devices due to its excellent physical properties and stability. Growing large-sized and high-quality Ga₂O₃ epitaxial films is a prerequisite for mass production of high-performance devices. Halide vapor phase epitaxy (HVPE) has become one of the most advantageous Ga₂O₃ epitaxial process methods due to its high rate, large area and stable film formation. However, there is relatively little research on the process of preparing Ga₂O₃ epitaxial films by HVPE in China, which is somewhat behind that of countries such as Japan.

Figure 1 4-inch k-Ga₂O₃ heteroepitaxial wafer

      Dr. Mi Wei and Dr. Wang Di from Professor Zhao Jinshi's research team at the School of Integrated Circuit Science and Engineering of Tianjin University of Technology, have been committed to the preparation and research of Ga₂O₃ epitaxial films and devices. Recently, the research team has made new breakthroughs in the research of HVPE epitaxial process of Ga₂O₃, and successfully grown κ- and β- Ga₂O₃ epitaxial films on 4-inch sapphire substrates. Both epitaxial films show excellent uniformity and high crystalline quality. The thickness of the κ-Ga₂O₃ epitaxial film is about 2 μm, and the FWHM of the (002) rocking curve is 379 arcsec. The thickness of the β-Ga₂O₃ epitaxial film reaches more than 4 μm, and its thickness distribution is < ±10%. This achievement and subsequent studies will provide support for the research and development of high-performance Ga₂O₃-based power devices.

Figure 2 4-inch β-Ga₂O₃ heteroepitaxial wafer

      This research is supported by Shandong Jingsheng Electronic Technology Co., Ltd. Tianjin University of Technology and Shandong Jingsheng Electronic Technology Co., Ltd. will actively cooperate to jointly promote the research on Ga₂O₃ epitaxial equipment and process, as well as talent training, and lay out the intellectual property protection and scientific research paper publication in related fields.

Figure 3 HVPE equipment used by the research group