【International Papers】Gas sensitivity of PECVD β-Ga₂O₃ films with large active surface

      Researchers from the National Research Tomsk State University have published a dissertation titled "Gas sensitivity of PECVD β-Ga₂O₃ films with large active surface " in Materials Chemistry and Physics.

Abstract

      The gas-sensitive properties of Ga₂O₃ films, first synthesized by plasma-enhanced chemical vapor deposition (PECVD), with respect to gaseous species of environmental and industrial interest were investigated in detail. The addition of some N₂ during the PECVD process made it possible to reduce the inherent high resistance of Ga₂O₃ material and increase its gas sensitivity. The PECVD-Ga₂O₃ films demonstrated high responses to H₂, O₂ and NH₃ with maximum response temperatures of 600 °C, 700 °C and 350 °C, correspondingly. The responses of Ga₂O₃ films to 1 vol % of H₂, 40 vol % of O₂ and 1 vol % of NH₃ at these temperatures were 400.73 %, 480.22 % and 335.35 %, correspondingly. The short response and recovery times of 7.6 s and 31.0 s have been achieved under H₂ exposure. A plausible mechanism of the sensory effect of the PECVD-Ga₂O₃ films was suggested. Thus, the PECVD synthesized Ga₂O₃ films demonstrate a large potential for the development of high-speed performance H₂ and O₂ sensors working at high temperatures.

Original link:https://doi.org/10.1016/j.matchemphys.2024.129430