【Member News】"Third Generation Semiconductor" and "Fourth Generation Semiconductor" Integration! GAREN SEMI joins hands with Maximum Semiconductor for Gallium Oxide wafer bonding!

      Recently, Suzhou enterprise - Suzhou Maximum Semiconductor Technology Co., LTD. (hereinafter referred to as "Maximum") and Hangzhou GAREN SEMI Co., LTD. (hereinafter referred to as "GAREN") signed a strategic cooperation agreement in Hangzhou. The two parties will rely on their respective resources and technological advantages to carry out in-depth cooperation in the field of advanced semiconductor Gallium Oxide wafer bonding.The signing of this strategic cooperation agreement highlights the common pursuit of the future development trend of semiconductor technology by both parties, and will also provide a broader platform for the integration of "Third Generation Semiconductor" and "Fourth Generation Semiconductor" materials, promote China's semiconductor technology to a new level, and inject new impetus for future scientific and technological progress and industrial development.

      Relying on our own research and development advantages in Gallium Oxide and Silicon bonding technology, Maximum collaborates with GAREN to achieve the bonding of Silicon Carbide and Gallium Oxide. In other words, it is to use the excellent heat dissipation performance of Silicon Carbide to make up for the lack of Gallium Oxide heat dissipation performance, and at the same time, through the bonding of Gallium Oxide and Silicon, greatly reduce the cost and promote the mass production of Gallium Oxide as a power device.

      It is understood that this cooperation is the world's first strategic cooperation that will integrate the third generation semiconductor materials with the fourth generation semiconductor materials for research and development, which will certainly bring unlimited possibilities for the development of the entire industry.