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【International Papers】Photoluminescence mapping of laser-damaged β-Ga₂O₃

日期:2024-07-09阅读:175

      Researchers from the Washington State University have published a dissertation titled " Photoluminescence mapping of laser-damaged β-Ga2O3 " in MRS Communications.

Abstract

      Photoluminescence (PL) mapping was utilized to investigate damage in β-Ga2O3 epilayers induced by 1064 nm laser pulses. The intensity and position of the intrinsic UV band were determined and plotted as a false-color image. Two types of damage were identified: circular damage and damage cracks. Circular damage shows lower UV PL intensity than the surrounding material with color centers in a “halo” around the damaged region. Damage cracks are aligned with the a and c axes and show higher PL intensity than undamaged material. Defects in the as-grown material were revealed by shifts in the UV band energy.

Original link:https://doi.org/10.1557/s43579-024-00564-1