【International Papers】Synthesis and characterization of Ga₂O₃ nanoparticles for electronic device applications

      Researchers from the Vidyavardhaka College of Engineering have published a dissertation titled "Synthesis and characterization of Ga₂O₃ nanoparticles for electronic device applications " in Inorganic Chemistry Communications.

Abstract

      Gallium oxide (Ga₂O₃) exhibits a bandgap of 4.5 to 4.9 eV, making it a promising semiconductor for various device applications. Ga₂O₃ nanoparticles were synthesized via the solution combustion method to study its structural, electrical, dielectric, and elasto-mechanical properties. X-ray diffraction data were used for Rietveld refinement, showing that synthesized β-Ga₂O₃ belongs to the monoclinic crystal system with lattice parameters a = 12.22 Å, b = 3.04 Å, c = 5.81 Å, and β = 103.85°. Using the Scherrer equation, the crystallite size was determined to be 36 nm. First principle calculations were used to determine and plot the crystallite size along three-dimensional crystallographic axes. Utilizing a 6 × 6 tensor matrix and ELATE, elastic moduli computation showed isotropic linear compressibility while other moduli demonstrated anisotropic behaviour. The sample’s dielectric properties such as capacitance, dielectric constant, dielectric loss, and ac conductivity are studied at different temperatures in the frequency range 50 Hz to 5 MHz.

Original link:https://doi.org/10.1016/j.inoche.2024.112562