【Domestic Papers】Epitaxial Growth of p-Type Cu-Doped Ga₂O₃ Nanoarrays on MgO Substrates

      Researchers from the Fujian Normal University have published a dissertation titled "Epitaxial Growth of p-Type Cu-Doped Ga₂O₃ Nanoarrays on MgO Substrates " in Crystal Growth & Design.

Abstract

      This study reports the successful growth of aligned Cu-doped β-Ga₂O₃ nanoarrays using the chemical vapor deposition (CVD) method. A MgO substrate was employed for epitaxial growth of Ga₂O₃ due to the lower lattice mismatch compared to sapphire and silicon. The morphology, growth mechanism, and optical and photoelectrochemical properties of Cu-doped β-Ga₂O₃ nanoarrays were thoroughly characterized. The experimental results indicate that doped Cu exists in the form of monovalent cuprous ions Cu⁺. Additionally, the β-Ga₂O₃ nanoarrays will exhibit p-type semiconductor properties after Cu doping at certain conditions. Therefore, this material has great potential for applications, particularly in the fields of photoelectrocatalysis and photoluminescence. These research findings provide an important reference for expanding the new application areas of Ga₂O₃.

Original link:https://doi.org/10.1021/acs.cgd.4c00099