【International Papers】Effect of tin doping on the structural, optical, and dielectric properties of unintentionally β-Ga₂O₃ single crystal

      Researchers from the Sohag University have published a dissertation titled "Effect of tin doping on the structural, optical, and dielectric properties of unintentionally β-Ga₂O₃ single crystal" in Physica Scripta.

Abstract

      This paper studied the structural, optical, electrical, and dielectric properties of the undoped and 0.05 mol% Sn-doped β-Ga₂O₃ single crystals through comprehensive characterizations by x-ray diffraction (XRD), Raman scattering, Optical transmittance spectroscopy, x-ray photoelectron spectroscopy (XPS), Ultraviolet photoelectron (UPS) spectroscopy, and dielectric measurements. The optical bandgap decreases as Sn content increases. The results of XPS showed that Sn atoms were successfully added to the host β-Ga₂O₃ crystal. The position of the Fermi level of 0.05 mol% Sn-doped β-Ga₂O₃ is calculated to be 2.56 eV above the valence band and 1.85 eV beneath the conduction band. Also, the computed value of the work function of 0.05% mole Sn-doped β-Ga₂O₃ is 4.53 eV. AC conductivity increases, while dielectric loss and dielectric constant decrease with increasing frequency.

Original link:https://doi.org/10.1088/1402-4896/ad5152