【Specialist Intro】Li Xiaohang —— the Member of Technical Expert Committee

Biography

Xiaohang Li is an Associate Professor of Electrical and Computer Engineering and Applied Physics, and the founding taskforce chair of Technology Innovation and Entrepreneurship Program at KAUST. He also serves as the Associate Director of KAUST Innovation Hub. He obtained Ph.D. in Electrical Engineering from Georgia Institute of Technology where he received the Institute’s highest PhD student honor, the Edison Prize. His research focuses on cutting-edge research on (ultra)wide bandgap semiconductors for next-generation electronics and photonics. He has authored over 160 journal papers in prestigious journals such as Nature Electronics, Advanced Materials, Light: Science & Application, Optica. He has also authored more than 250 conference publications and presentations, and holds >20 issued patents. He is the recipient of several prestigious awards including the Harold M. Manasevit Young Investigator Award from the American Association for Crystal Growth, the SPIE D. J. Lovell Scholarship, the IEEE Photonics Graduate Student Fellowship, the Georgia Tech 40 under 40 Award. His team has received best student and paper awards from IWN, ICNS, and SPIE. He is an Associate Editor of Photonics Research, an editorial member of Journal of Semiconductor, a guest editor of Advanced Electronic Materials and Advanced Materials Interfaces, and as a committee member of several leading conferences including IWN, EMC, and IC-MOVPE. He is also a reviewer of journals such as Nature Photonics, Nature Materials, and Nature Electronics.

Achievement Display

1、First Ga₂O₃/NiO CMOS transistor and IC: https://pubs.acs.org/doi/10.1021/acsami.3c15778

2、First Ga₂O₃ flash memory: https://iopscience.iop.org/article/10.35848/1347-4065/acdbf3/meta

3、First Ga₂O₃ pseudo CMOS: https://ieeexplore.ieee.org/document/10232901

4、The first heterogeneous Ga₂O₃ NMOS integrated circuit：https://pubs.aip.org/aip/apl/article/122/14/143502/2882382

5、First epitaxial Ga₂O₃ flexible device: https://pubs.aip.org/aip/apl/article/122/12/121101/2880825/Flexible-self-powered-DUV-photodetectors-with-high

6、Preparation of High Al Content and High Quality (AlGa) ₂O₃ Materials for the First Time by Thermal Diffusion Method：https://pubs.aip.org/aip/apl/article/118/3/032103/1022446First

7、AlN/Ga₂O₃ device: https://arxiv.org/abs/1901.05111

8、First demonstration of α-, β- and ε-Ga₂O₃ films grown by MOCVD: https://pubs.acs.org/doi/full/10.1021/acs.cgd.7b01791?casa_token=imOxuJAc-8QAAAAA%3AGAb_WQp7XrYBwMAPNmEJCmtemkIf0fz2ZiZPqJzysy-9voNXIjgl40s9C5XpBuHqjcDVsfk5AjmW8h81

Expert's Message

As one of the youngest members of the wide bandgap family, Ga₂O₃ possesses tremendous potentials. But meanwhile it faces significant competitions from early entrants such as SiC and GaN. It is crucial to leverage advantages of Ga₂O₃ and minimize impact of disadvantages of Ga₂O₃. Apart from power electronics, I believe that Ga₂O₃ could have enormous opportunities in the areas of extreme environment integrated circuits and devices.