【Member News】The National Key Research and Development Plan "Research on Large-size Gallium Oxide Semiconductor Materials and High-Performance Devices" project held the 2024 mid-year exchange meeting

      On July 19, the 2024 annual mid-year exchange meeting of the National Key Research and Development Plan "New Display and Strategic Electronic Materials" key special project "Research on Large-size Gallium Oxide Semiconductor Materials and High-Performance Devices" was held in Hangzhou Institute of Optics and Fine Mechanics (hereinafter referred to as "Hangzhou Optical Machinery"). The meeting was attended by the former deputy director of the National Natural Science Foundation of China High Technology Center Mr. Bian Shuguang, deputy director Zhang Long, the deputy director of the key research and development program Mr. Qi Hongji, Mr. Wu Yongqing, the deputy director of the Science and Technology Industry Division of the Shanghai Institute of Silicate, the Chinese Academy of Sciences, and more than 20 other experts in related fields and project members.

      At the meeting, Zhang Long delivered a welcome speech on behalf of the project undertaking unit, and pointed out that the project has made certain progress in the past year, looking forward to the experts can give more valuable suggestions to the project team and carry out more extensive exchanges and cooperation.

      Qi Hongji researcher reported the overall progress of the project in the middle period. He said that since the establishment of the project, the project team has established a resonance doping mechanism model, achieved a series of landmark achievements in the preparation and engineering of Gallium Oxide single crystal, P-type Gallium Oxide research, and Gallium Oxide power devices and Gallium Oxide radio frequency devices, and gradually formed a research closed loop.

      The leaders of each sub-project reported the progress of the work respectively, and the experts at the meeting put forward suggestions from the aspects of technology itself, future application scenarios and communication and cooperation between the project teams.

      Wu Yongqing made a report on "Leading standards, seizing the commanding heights of science and technology, developing new quality productivity", he pointed out that we should actively promote the integrated development of scientific and technological innovation and industrial innovation, constantly improve the transformation and standardization of scientific and technological achievements, and use standardization to help build the development engine of new quality productivity, and take core technical standards as the starting point to occupy the commanding heights of science and technology and master the right to speak.

      Bian Shuguang summed up his speech, he affirmed the overall progress of the project and the deployment of the whole chain of work. He emphasized that Gallium Oxide material and its future technology development trend have been widely recognized by the national and local governments, the project team should focus on the industry difficulties, pain points, to solve the material growth technology "jam" problem; It is necessary to benchmark the international, train professional talents to enter international standards, and seize the strategic commanding heights; We should strengthen openness, cooperation and sharing, establish a mechanism for sharing intellectual property rights, and identify suitable application scenarios to achieve greater development.

      The project is led by Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, and collaborates with Xiamen University, Jilin University, 55th Research Institute of China Electronic Science and Technology Group Corporation, Beijing Sinoma Synthetic Crystals Co., Ltd, Fudan University, University of Electronic Science and Technology of China, SIOM-H, Hangzhou Fujia Gallium Industry Technology Co., LTD. The project is aimed at the urgent need for the development of Gallium Oxide based solar-blind ultraviolet detection and power electronic devices. Based on solving the key scientific issues of Gallium Oxide single crystal substrate and epitaxial thin film defect and doping mechanism, the structure-activity relationship between microscopic electronic structure, film physical properties and device properties, the project has broken through key technologies such as 6-inch single crystal thermal field design, high-quality epitaxial film growth, device core structure design, etc. A new generation of high-performance Gallium Oxide base power and detector is developed.