【Member News】Fujia Gallium Industry Processing Technology Breakthrough, with High Cost Performance to Help the Gallium Oxide Industry to Take Off

      Hangzhou Fujia Gallium Industry Technology Co., Ltd. has always adhered to the industrialization orientation, following the breakthrough of EFG 6-inch Gallium Oxide single-crystal growth technology, recently the company's Gallium Oxide substrate processing technology has made a breakthrough, 6-inch Gallium Oxide substrate surface roughness, curvature and other indicators reached the same size of Silicon Carbide substrate standard. It had exhibited at the 1st Gallium Oxide Technology and Industry Conference in 2024 (Figure 1).

Figure 1: 6-inch Gallium Oxide Substrate

      In order to help the rapid formation of industrial ecology in the field of Gallium Oxide in China and realize the integration of domestic Gallium Oxide single crystal, epitaxy and device full link, the company plans to provide large-size Gallium Oxide substrate cutting and processing services (i.e. secondary processing into wafers) from August 2024, and provide universities and research and development institutions with more cost-effective and consistent Gallium Oxide wafers (see Annex 1). Let more colleagues in the field of Gallium Oxide use high-quality Gallium Oxide domestic single crystal materials. At the same time, according to the actual needs of the current development of Gallium Oxide field, the company has launched Gallium Oxide seed crystal products (see Annex 2) to promote the rapid development of the industry.

      In recent years, Hangzhou Fujia Gallium Industry Technology Co., Ltd. has continuously innovated in the preparation technology of Gallium Oxide single crystal and epitaxial wafer, contributing to the development of the industry. At present, the problem of "stuck neck" of Gallium Oxide materials in China has been preliminarily solved. The single crystal substrate and epitaxial wafer produced by the company will gradually move to the world stage.

About Us:

      Hangzhou Fujia Gallium Industry Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "making the world use good materials", the company carries out the industrialization work of wide band gap semiconductor Gallium Oxide materials. Mainly engaged in the growth of Gallium Oxide single crystal bulk, substrate and epi-wafer for R&D, production and sales, the products are mainly used in power devices, microwave radio frequency and photoelectric detection fields.

      At present, the company has won a number of honors:

      In 2022, it will be awarded as a technology-based small and medium enterprises in Zhejiang Province. National high-tech Enterprise in 2023; In 2024, Hangzhou Enterprise High-tech R&D Center and Zhejiang Province specialized and special new small and medium enterprises will be awarded; In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 37 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium Industry", and 2 software Copyrights (crystal growth control software).

Annex 1: 2 inch substrate wafer cutting product specification:

Annex 2: (100) facing and (001) facing seed product specifications:

About Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. Mainly engaged in the growth of Gallium Oxide single crystal materials, Gallium Oxide substrate and epitaxial wafer research and development, production and sales, the products are mainly used in power devices, microwave radio frequency and photoelectric detection fields.

       At present, the company has won a number of honors: In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium Industry", and 3 software copyrights (crystal growth control software).

For more information about Hangzhou Fujia and its products

Please visit our official website: www.fujia-hiom.com