【Domestic Papers】Thermal characteristics analysis of Ga₂O₃ and GaN devices on different substrates

      Researchers from the Xi'an University of Technology have published a dissertation titled "Thermal characteristics analysis of Ga₂O₃ and GaN devices on different substrates " in Microelectronics Journal.

Abstract

      As third-generation semiconductors, GaN and Ga₂O₃ have attracted wide attentions because their unique advantages in large-power and high-frequency fields. However, due to the self-heating effect, the device performance is lower than the theoretical prediction, especially for β-Ga₂O₃ with extremely low thermal conductivity. In this work, the thermal characteristics of Ga₂O₃ and GaN Field Effect Transistors(FET) on different substrates, including Si, SiC, cubic boron nitride (c-BN) and diamond, were compared by COMSOL. The effects of structural parameters, power density and boundary thermal resistance (TBR) on the thermal characteristics of Ga₂O₃ and GaN FET were explored, of which the temperature-dependent thermal conductivities of material are included. The maximum channel temperatures of FET on different substrates were extracted at 1–10 W/mm. The power density values corresponding to the safe junction temperature limits of Ga₂O₃ and GaN FET on different substrates were estimated as 3, 4.2, 5.5 and 6 W/mm. This study provides some theoretical guidance for the effective thermal management of Ga₂O₃ and GaN FET.

DOI：doi.org/10.1016/j.mejo.2024.106266