【International Papers】Photochemical wet etching of (001) plane β-phase Ga₂O₃, and its anisotropic etching behavior

      Researchers from the Dankook University have published a dissertation titled "Photochemical wet etching of (001) plane β-phase Ga₂O₃, and its anisotropic etching behavior " in Applied Surface Science.

Abstract

      The photochemical (PC) wet etching behavior of (0 0 1) plane β-phase Ga₂O₃ (β-Ga₂O₃) single crystal was investigated using potassium hydroxide etchant solution under ultraviolet illumination in the temperature range of 80–95 °C. The etch rate was 1.65 nm/min at 80 °C, and increased up to 4.88 nm/min at 95 °C. The etch rate of the (0 0 1) plane β-Ga₂O₃ shows strong temperature dependence with the activation energy of 0.798 eV. The PC wet etching characteristics of the (0 0 1) plane β-Ga₂O₃ was compared with those of (2¯01) and (0 1 0) plane β-Ga₂O₃. The etch rates increased in order of the (0 1 0), (2¯01), and (0 0 1) plane, which is accordance with the increasing surface energy trend. The oval line-shaped grooves aligned along [0 1 0] direction were observed on the etched (0 0 1) plane β-Ga₂O₃ crystal surface after 30 min. PC wet etching at 80 °C.

DOI：doi.org/10.1016/j.apsusc.2024.160330