【Domestic Papers】Researchers from the Lanzhou University of Technology Investigation and Comparison of the Performance for β-Ga₂O₃ Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate

      Researchers from the Lanzhou University of Technology have published a dissertation titled "Investigation and Comparison of the Performance for β-Ga₂O₃ Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate " in crystals.

Abstract

      Ga₂O₃, with its large band gap, is a promising material suitable for utilization in solar-blind photodetection. Sapphire with a higher lattice match with Ga₂O₃ was used as the substrate for epitaxial growth of Ga₂O₃. Here, the epitaxial layers of Ga₂O₃ were deposited by MOCVD on patterned sapphire substrates. The structure of epitaxial Ga₂O₃ layers on patterned substrates has been identified by X-ray diffractometry. To investigate the influence of the patterned substrates on the formation of epitaxial layers, thin Ga₂O₃ layers were grown on a flat sapphire substrate under the same conditions. Both types of samples were β-phase. However, no improvement in the layers’ crystalline quality was discovered when utilizing patterned sapphire substrates. In addition, the performance of the obtained two types of Ga₂O₃ photodetectors was compared. The photoelectric properties, such as responsivity, response speed, and detection capability, were different in the case of flat samples.

Figure 1. Top-view SEM images of (a) PSS, (c) Ga₂O₃ film deposited on PSS, and (e) Ga₂O₃ film deposited on FSS. Cross-sectional SEM micrograph of (b) PSS, (d) Ga₂O₃ film deposited on PSS, and (f) Ga₂O₃ film deposited on FSS.

Figure 2. XRD pattern from θ-2θ scans of Ga₂O₃ layers grown on (a) PSS and (b) FSS. UV-vis absorbance characterizations of the as-prepared Ga₂O₃ film grown on (c) PSS and (d) FSS.

DOI：doi.org/10.1002/pssb.202400137