【Member News】New Breakthrough | GAREN SEMI Successfully Developed Gallium Oxide Ultra-Thin 6-inch Substrate

      In August 2024, Hangzhou GAREN SEMI Co., Ltd. made a breakthrough in the Gallium Oxide substrate processing technology, and successfully developed an ultra-thin 6-inch substrate with a substrate thickness of less than 200 microns.

      Gallium Oxide (β-Ga₂O₃) has the advantages of large band gap, high breakdown field strength, and large Baliga’s Figure of Merit. It has great application potential in high-voltage, high-power, high-efficiency and small-size electronic devices, which can greatly reduce the power loss of devices during operation, and is expected to become the main force in the field of semiconductor power electronics in the future.

      However, the low thermal conductivity of Gallium Oxide will increase the self-heating effect of the device, and a large amount of heat will accumulate in the device, which will lead to the degradation of the device performance, and its application in the field of high power is greatly limited. Reducing the thickness of the substrate can make the heat generated by the device dissipate through the substrate, enhance the heat dissipation capacity of the device and improve the performance of the device. The ultra-thin 6-inch substrate provides a new choice for the preparation of high-performance devices, meets the scientific research and production needs in the field of power devices, and promote cooperation between industry, education and research.

      Hangzhou GAREN SEMI Co., Ltd. is mainly engaged in the research, development and production of Gallium Oxide and other semiconductor single crystal materials. It has been approved as National Technology Small and Medium-Sized Enterprise, the Innovative Small and Medium-Sized Enterprise of Zhejiang Province, Technology Small and Medium-Sized Enterprise of Zhejiang Province, the High-Tech Research and Development Center of Hangzhou City. And has been approved by the Xiaoshan District "5213" plan (excellent class), Hangzhou Xiaoshan District Leading Innovation and Entrepreneurship Project and other projects, with strong production and research and development strength. In addition, the company recently successfully completed nearly 100 million yuan of Pre-series A Funding Round, not only for the company's technology research and development and market expansion to provide strong financial support, but also fully demonstrated the capital market on the company's technology and market prospects. In the future, the company's R&D team will continue to carry out independent innovation work, and gradually break through lower cost and higher quality Gallium Oxide substrates, promote the high-quality development of Gallium Oxide industry, and support to achieve the development goal of "Carbon Neutrality" and "Peak Carbon Dioxide Emissions".

Company Profile

      Hangzhou GAREN SEMI Co., Ltd. was established in September 2022, is a technology enterprise focusing on the research and development, production and sales of Gallium Oxide and other wide band gap semiconductor materials. The company has created a new technology for Gallium Oxide single crystal growth, and has more than ten international and domestic invention patents, breaking through the monopoly and blockade of Western countries such as the United States, Germany and Japan on Gallium Oxide substrate materials. Based on solving the major national needs, GAREN SEMI will be deeply engaged in the continuous innovation of the Gallium Oxide upstream industry chain, and strive to provide product guarantee for the development of China's power electronics and other industries.

For more information about GAREN SEMI and its products

Please visit our official website: http://garen.cc/

Or contact us:

Mr. Jiang :15918719807

Email: jiangjiwei@garen.cc

Mr. Xia :19011278792

Email:xianing@garen.cc