【Member News】Professor Zhao Jinshi's team of Tianjin University of Technology was Pleased to Obtaining Two Tianjin Key Research and Development Projects Approval

      Recently, Prof. Mi Wei and Prof. He Lin’an from the College of Integrated Circuit Science and Engineering at Tianjin University of Technology, led by Prof. Zhao Jinshi, obtaining two Tianjin key research and development projects approval and have made new breakthroughs in cooperation between Beijing, Tianjin, and Hebei.

      "Research on thick film epitaxy of large size Gallium Oxide semiconductor materials and high performance photoconductive switch devices", this project is led by Tianjin University of Technology and in collaboration with Beijing University of Technology, focusing on a new generation of wide band gap semiconductor material——Gallium Oxide, aiming to achieve the preparation of large size Gallium Oxide semiconductor materials through HVPE thick film epitaxy technology. And develop high-performance optical switch devices based on it. As the project progresses, the complete technology chain from Gallium Oxide material growth and epitaxy process to final device fabrication is expected to be achieved. The results of this research are expected to be gradually extended to a number of key fields such as electric vehicles, power conversion, marine power integration system, radar detection, UV warning and environmental monitoring. This will not only inject vitality into the technological innovation of related industries, the upgrading of industrial structure and economic growth, but also support China to break through the international technical barriers, enhance the international competitiveness in the field of wide band gap semiconductor technology, and then promote China's continuous progress and leading position in this frontier field of science and technology.

      "Research on high-speed UV photodetector based on oxide ultra-wide band gap semiconductor materials", the project is led by Tianjin University of Technology and jointly with Beijing Infrared Semiconductor Technology Co., LTD., for the research and development of high-speed solar-blind UV detector for Internet of things communication and short-range encrypted communication applications, relying on the team's years of accumulated scientific research foundation and industry, education and research experience. It is expected that the integrated design of ultra-wide band gap semiconductor materials, detector chips and high-reliability packages will be realized, and the enterprise will participate in the whole process of product development and finalization, connecting with market demand information and necessary R & D resources. This research will have broad application prospects in the fields of short-distance interconnecting communication in complex terrain, laser processing, instrumentation and multi-dimensional photoelectric detection. The two sides will take this project as an opportunity to explore the possibility of cooperation in more fields.

      The approval of the project not only reflects the team's scientific research strength in the field of optoelectronic materials and devices, but also benefits from the strong support of college in promoting cooperation between industry, education and research. In recent years, the college has actively responded to the national innovation-driven development strategy, strengthened the deep integration of industry, education and research, accelerated the transformation of scientific and technological achievements, and made positive contributions to the coordinated development and industrial upgrading of the Beijing-Tianjin-Hebei region.