【International Papers】Atomic Scale Defect Formation and Evolution at LiGa₅O₈/β-Ga₂O₃ and Ga₂O₃/Ni/Au Interfaces

      Researchers from the Ohio State University have published a dissertation titled " Atomic Scale Defect Formation and Evolution at LiGa₅O₈/β-Ga₂O₃ and Ga₂O₃/Ni/Au Interfaces  " in Microscopy and Microanalysis.

Abstract

      Beta gallium oxide (β-Ga₂O₃) is a promising candidate for future power electronics due to its distinctive advantages such as ultrawide bandgap, high breakdown voltage, and tunable n-type doping. We use scanning transmission electron microscopy (STEM) combined with spectroscopy methods to understand the unique structure-property relationships in Ga₂O₃ materials and interfaces. Our recent studies for two novel interfaces of Ga₂O₃ will be presented.

DOI：

https://doi.org/10.1093/mam/ozae044.529