Paper Sharing
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【Epitaxy Papers】Radiation Resistance and Defect Evolution in bulk β-Ga₂O₃: A Molecular Dynamics Study
[ 2025-04-03 ] -
【Epitaxy Papers】Realizing freestanding single-crystal oriented membranes of ultrawide-bandgap semiconductor ε-Ga₂O₃ and their prospects in optoelectronic device applications
[ 2025-04-03 ] -
【Epitaxy Papers】Bias dependent band alignment in Ga₂O₃ ferroelectric interface by operando HAXPES
[ 2025-04-03 ] -
【Member Papers】 Xidian University --- (001) β-Ga₂O₃ epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD
[ 2025-04-03 ] -
【Member Papers】 Xidian University --- First-principles study of Mg-Ge co-doping to realize p-type β-Ga₂O₃ containing divacancy-interstitial complex defects
[ 2025-04-01 ] -
【Domestic Papers】Beijing Institute of Technology --- An ultra-violet and infrared dual-band photodetector using a Ga₂O₃ thin film and HgTe colloidal quantum dots
[ 2025-04-01 ] -
【Domestic Papers】 Beijing University of Technology --- Growth modes of β-Ga₂O₃ on h-BN: Remote epitaxy and van der Waals epitaxy
[ 2025-04-01 ] -
【International Papers】Electronic and Optical Properties of Highly Complex Ga₂O₃ and In₂O₃ Polymorphs Using Approximate Quasiparticle DFT + A – 1/2
[ 2025-04-01 ] -
【Device Papers】GaOx interlayer-originated hole traps in SiO₂/p-GaN MOS structures and their suppression by low-temperature gate dielectric deposition
[ 2025-04-01 ] -
【Device Papers】High-performance, reliable and self-powered solar-blind photodetectors based on GQDs/α-Ga₂O₃ heterojunctions
[ 2025-04-01 ]
