Paper Sharing
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【Member Papers】Amorphous InHfZnO/Ga₂O₃ heterojunction by plasma-enhanced atomic layer deposition for transparent photoelectric synaptic devices with temperature-tunable mechanism analysis
[ 2026-03-30 ] -
【International Papers】Atomic layer deposition of gallium oxide using gallium triazenide and water
[ 2026-03-30 ] -
【Domestic Papers】Quantitative insight into illumination-induced barrier lowering mediated by self-trapped-holes in Ga₂O₃ Schottky photodiodes
[ 2026-03-27 ] -
【Member Papers】Research of Schottky diode based on Ga₂O₃/SiC pn heterojunction RESURF structure
[ 2026-03-27 ] -
【Device Papers】Crystal-Phase Dependence of Solar-Blind UV Photodetector Performance: A Comparison of ε-, β-, and ε/β-Mixed Ga₂O₃
[ 2026-03-27 ] -
【Device Papers】Self-organized growth of Ga₂O₃ nanowire array deep-ultraviolet detectors in selected areas of sacrificial layer technology
[ 2026-03-27 ] -
【Member Papers】4.1/3.5 kV Breakdown Voltage in Depletion/Enhancement-Mode MOCVD-Grown Ga₂O₃ MOSFETs on Sapphire Substrates
[ 2026-03-26 ] -
【Domestic Papers】Recent advances in heterojunction engineering of β-Ga₂O₃-based solar-blind ultraviolet photodetectors
[ 2026-03-26 ] -
【Member Papers】Self-catalytic growth and ultraviolet detection performance of Cu: β-Ga₂O₃ nanowires
[ 2026-03-26 ] -
【Member Papers】Journal of Alloys and Compounds | Prof. Weifeng Yang’s Group at Xiamen University: Low-Leakage and High On/Off Current Ratio Vertical β-Ga₂O₃ Schottky Barrier Diodes Achieved by Interface Nitrogen Doping Technology
[ 2026-03-25 ]
