Paper Sharing
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【Member Papers】 First-principles study on formation and action mechanism of intrinsic Ga and O vacancy in β‑Ga₂O₃
[ 2026-04-29 ] -
【Member Papers】 Beyond a single mechanism: Uncovering the dual origin of degradation in β-Ga₂O₃ SBDs under forward bias stress
[ 2026-04-28 ] -
【Member Papers】Influence of Point Defect on the Electronic and Magnetic Properties of β-Ga₂O₃: A First-Principles Study
[ 2026-04-28 ] -
【Member Papers】Ultrawide Bandgap Semiconductor in Photonic Devices: From Fundamental Nonlinear Optical Properties to Emerging Devices
[ 2026-04-28 ] -
【Member Papers】Demonstration of Ga₂O₃ Lateral MOSFET With Integrated Freewheeling Diode for Low-Loss Reverse Conduction
[ 2026-04-27 ] -
【Domestic Papers】Synergy of fluorine-based plasma treatment and wet chemical treatment for β-Ga₂O₃ Schottky barrier diode (SBD) with superior breakdown characteristics
[ 2026-04-27 ] -
【Domestic Papers】Fabrication of a Self-Powered β-Ga₂O₃/PEDOT:PSS Heterojunction for Polarization-Sensitive Ultraviolet Imaging Sensing
[ 2026-04-27 ] -
【Device Papers】Forming-free resistive switching characteristics of RF-sputtered Ga₂O₃-based memristors
[ 2026-04-27 ] -
【Device Papers】Layer-Selective Crystallization of Indium–Gallium Oxide and Indium–Gallium–Zinc Oxide Bilayer Channel Induced by Annealing After UV Treatment for High-Performance Oxide Thin-Film Transistors
[ 2026-04-27 ] -
【Member Papers】Research Progress in the Epitaxy, Doping Control, and Defect Management of Gallium Oxide Thin Films
[ 2026-04-24 ]
