Paper Sharing
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【Member Papers】Review of Mist-CVD Technology for Ga₂O₃ Power and Optoelectronic Devices
[ 2026-02-02 ] -
【Device Papers】Enhanced Sensitivity and Fast Response in α-Ga₂O₃ X-ray Detectors Using Asymmetric Pt/Ti Electrodes
[ 2026-02-02 ] -
【Device Papers】Ultrahigh Photocurrent in a Self-Powered Deep Ultraviolet Photodetector via P+/P/N-β-Ga₂O₃ Heterojunction and Patterned Top-Electrode Design
[ 2026-02-02 ] -
【Member Papers】Universal Role of Dopant-VGa Complexes Induced Carrier Suppression in Si/Ge/Sn/Zr-doped β-Ga₂O₃
[ 2026-02-02 ] -
【Domestic Papers】Ferroelectric optoelectronic sensor for intelligent flame detection and in-sensor motion perception
[ 2026-02-02 ] -
【Member Papers】2.5 kV/674 MW/cm² or 100 A/2 kV β-Ga₂O₃ heterojunction diodes with large surge current and small recovery time
[ 2026-01-28 ] -
【Member Papers】Ultrahigh Dielectric Permittivity in Ultrathin 2D β‑Ga₂O₃ for Advanced Dielectric Applications
[ 2026-01-28 ] -
【Epitaxy Papers】The Growth of Doped β-Ga₂O₃ Thin Films on Quartz and Al₂O₃ Substrates by Using Sol Gel Method
[ 2026-01-28 ] -
【Epitaxy Papers】The effect of hydrogen annealing on the electrical properties of β-Ga₂O₃/4H-SiC MOSFETs grown by liquid-injection MOCVD
[ 2026-01-28 ] -
【Member Papers】The Demonstration of Amperometric Ga₂O₃ Two-step Trench Schottky Barrier Diode
[ 2026-01-27 ]
