Paper Sharing
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【Member Papers】Ultrathin GaOx Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor
[ 2026-03-18 ] -
【Device Papers】Investigation of high-temperature electrical transport and current conduction mechanism in PLD deposited LaAlO₃/Sn-doped β-Ga₂O₃ (−201) MOS capacitor
[ 2026-03-18 ] -
【Device Papers】Engineering unidirectional photocurrent in isotype-Ga₂O₃/GaN-based light-activated diodes
[ 2026-03-18 ] -
【Member Papers】Bond-angle modulation in nucleation layer overcomes lattice-mismatch limits in Ga₂O₃ heteroepitaxy
[ 2026-03-17 ] -
【International Papers】Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β-Ga₂O₃ (001) Trench Schottky Barrier Diodes Using H₃PO₄ Treatment
[ 2026-03-17 ] -
【Others Papers】Intrinsic emittance properties of an Fe-doped β-Ga₂O₃(010) photocathode: Ultracold electron emission at 300 K and the polaron self-energy
[ 2026-03-17 ] -
【Others Papers】Micromechanical Properties of β-Ga₂O₃ Single Crystal By Instrumented Indentation and Scratch Tests
[ 2026-03-17 ] -
【Member Papers】Nitrogen Annealing for Defect Recovery in Low-fluence Ion-irradiated β-Ga₂O₃ Schottky Barrier Diodes
[ 2026-03-16 ] -
【Epitaxy Papers】Homoepitaxial growth of (100) Si-doped β-Ga₂O₃ films via MOCVD using TMGa: Effects of growth temperature and oxygen flow rate
[ 2026-03-16 ] -
【Epitaxy Papers】Stoichiometry-Driven Tuning of Hole Conductivity in MOCVD-Grown β-Ga₂O₃ on r-Sapphire Substrates
[ 2026-03-16 ]
