Paper Sharing
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【Device Papers】Modulated electronic structure of β-Ga₂O₃/4H-SiC heterojunctions by polarization effect from first principles
[ 2025-07-14 ] -
【International Papers】Charge recovery by vacuum annealing in β-Ga₂O₃ multi-fin trench Schottky barrier diodes
[ 2025-07-11 ] -
【International Papers】Investigation of Oxygen Vacancies and Reverse Leakage Suppression in High-Breakdown Vertical Ga₂O₃/4H-SiC Schottky Rectifiers
[ 2025-07-11 ] -
【Epitaxy Papers】Atomic interface structure and electronic properties at nanoscale rotated crystal in Ga₂O₃ homoepitaxial film
[ 2025-07-11 ] -
【Epitaxy Papers】Size effects and temperature dependence in the thermal conductivity of γ-Ga₂O₃ films
[ 2025-07-11 ] -
【Epitaxy Papers】The effects of sputtering powers on the structural, optical and electrical properties of β-Ga₂O₃ thin films prepared by magnetron sputtering
[ 2025-07-11 ] -
【Member Papers】Synthesis and characterization of β-Ga₂O₃ nanowires on 4H-SiC substrates via Au-catalyzed low-pressure chemical vapor deposition
[ 2025-07-10 ] -
【Domestic Papers】Influence of temperature on the performance of ε-Ga₂O₃-based surface acoustic wave delay lines
[ 2025-07-10 ] -
【Member Papers】Theoretical insights into the interface performance of Ga₂O₃/ZnO heterostructure photodetectors driven by polarization and strains
[ 2025-07-10 ] -
【Member Papers】Performance Improvement in Ga₂O₃ Schottky Photodiode With Pyroelectric Effect
[ 2025-07-10 ]
