Paper Sharing
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【Member Papers】Insight Into the Performance Degradation of p-NiO/n-Ga₂O₃ Heterojunction Barrier Schottky Diode Under Forward Bias Stress
[ 2026-04-03 ] -
【Member Papers】Tunable electronic properties of κ-(Al, In)₂O₃/Ga₂O₃ digital alloys via superlattice design
[ 2026-04-03 ] -
【Member Papers】Electro-thermal crosstalk revealed by Raman thermography in multi-fin β-Ga₂O₃ FinFETs
[ 2026-04-02 ] -
【Member Papers】Identifying the Predominant Leakage Channel under Low Reverse Bias for β‑Ga₂O₃ Vertical Device Epitaxy on the (010) Plane
[ 2026-04-02 ] -
【Member Papers】Structural evolution and photoluminescence modulation by Gd³⁺ in Tb³⁺-doped Ga₂O₃
[ 2026-04-02 ] -
【Device Papers】Characterizing Carrier Traps in Ga₂O₃ Schottky Barrier Diodes Using the Current Transient Method
[ 2026-04-02 ] -
【Device Papers】Dual-Band Ultraviolet Photodetection via a Single SiC/SiO₂/Ga₂O₃ Core–Shell-Satellite Nanowire Heterojunction
[ 2026-04-02 ] -
【Member Papers】β-Ga₂O₃ Array with Extremely-Low 3 nW/cm² Detection Threshold for Ultra-Weak UV-C Image Recognition and Instance Segmentation
[ 2026-04-01 ] -
【Domestic Papers】Achieving programmable bipolar photocurrents via p–n junction design for PEPS-based optoelectronic applications
[ 2026-04-01 ] -
【International Papers】Self-Rectifying Dynamic Memristor Based on 2D-Graphene/V-doped Ga₂O₃ for Neuromorphic Processing
[ 2026-04-01 ]
