Paper Sharing
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【Device Papers】Self-organized growth of Ga₂O₃ nanowire array deep-ultraviolet detectors in selected areas of sacrificial layer technology
[ 2026-03-27 ] -
【Member Papers】4.1/3.5 kV Breakdown Voltage in Depletion/Enhancement-Mode MOCVD-Grown Ga₂O₃ MOSFETs on Sapphire Substrates
[ 2026-03-26 ] -
【Domestic Papers】Recent advances in heterojunction engineering of β-Ga₂O₃-based solar-blind ultraviolet photodetectors
[ 2026-03-26 ] -
【Member Papers】Self-catalytic growth and ultraviolet detection performance of Cu: β-Ga₂O₃ nanowires
[ 2026-03-26 ] -
【Member Papers】Journal of Alloys and Compounds | Prof. Weifeng Yang’s Group at Xiamen University: Low-Leakage and High On/Off Current Ratio Vertical β-Ga₂O₃ Schottky Barrier Diodes Achieved by Interface Nitrogen Doping Technology
[ 2026-03-25 ] -
【Domestic Papers】Characteristics of gallium oxide nMOSFET inverter
[ 2026-03-25 ] -
【Others Papers】Preparation of high-purity Ga₂O₃ by urea/ammonia-induced crystallization of GaOOH and its thermal conversion
[ 2026-03-25 ] -
【Others Papers】Designing luminescent centers in β-Ga₂O₃ via lanthanide doping: a first-principles investigation
[ 2026-03-25 ] -
【Member Papers】Ultralow dark current and high-sensitivity self-powered solar-blind UV photodetector with p-CuZnS/n-Ga₂O₃ heterojunction
[ 2026-03-24 ] -
【International Papers】On the nature of deep-level defects in β-Ga₂O₃ epilayers: The impact of isochronal rapid thermal annealing
[ 2026-03-24 ]
