Paper Sharing
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【Epitaxy Papers】Performance Enhancement of MOCVD Grown β-Ga₂O₃ MOSFETs on Silicon Substrates via AlN Buffer Layer
[ 2025-02-27 ] -
【Epitaxy Papers】Interface Modification by Ga₂O₃ Atomic Layers within Er-Doped GeO₂ Nanofilms for Enhanced Electroluminescence and Operation Stability
[ 2025-02-27 ] -
【International Papers】Researchers from the University of California San Diego of Low-temperature pressure-assisted liquid-metal printing for β-Ga₂O₃ thin-film transistors
[ 2025-02-25 ] -
【Member Papers】Novel Crystal Technology Achieves Breakthrough in Gallium Oxide JFETs Reach Beyond 10kV Breakdown
[ 2025-02-25 ] -
【Domestic Papers】Anhui University —— Analysis Of Output Characteristics of Three Different Ga₂O₃ Heterojunction UV Photodetectors
[ 2025-02-25 ] -
【International Papers】Gas-Thermal Spraying Synthesis of β-Ga₂O₃ Luminescent Ceramics
[ 2025-02-25 ] -
【Device Papers】Reliability of NiO/β-Ga₂O₃ bipolar heterojunction
[ 2025-02-25 ] -
【Device Papers】High-Performance Solar-Blind Ultraviolet Photodetectors Based on a Ni/β-Ga₂O₃ Vertical Schottky Barrier Diode
[ 2025-02-25 ] -
【Device Papers】Evaluation of the Bonding Strength of Die Attachment Techniques for Gallium Oxide Power Devices
[ 2025-02-25 ] -
【Device Papers】Design and Analysis of High-Performance Schottky Barrier β-Ga₂O₃ MOSFET With Enhanced Drain Current, Breakdown Voltage, and PFOM
[ 2025-02-25 ]
