Paper Sharing
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【Member Papers】Researchers from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, investigated the extremely low thermal resistance of β-Ga₂O₃ MOSFETs achieved through the co-integrated design of substrate engineering and device packaging.
[ 2024-12-06 ] -
【International Papers】Pseudo-source gated beta-gallium oxide MOSFET
[ 2024-12-06 ] -
【Epitaxy Papers】Effects of off-axis angles of 4H-SiC substrates on properties of β-Ga₂O₃ films grown by low-pressure chemical vapor deposition
[ 2024-12-06 ] -
【Epitaxy Papers】Transport and electronic structure properties of MBE grown Sn doped Ga₂O₃ homo-epitaxial films
[ 2024-12-06 ] -
【Epitaxy Papers】Effect of Thermal Annealing on Properties Ga₂O₃/GaAs:Cr Heterostructures
[ 2024-12-06 ] -
【Epitaxy Papers】Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga₂O₃ films sputtered on silicon
[ 2024-12-06 ] -
【Device Papers】Ultra-high PDCR(>10⁹) of vacuum-UV photodetector based on Al-doped Ga₂O₃ microbelts
[ 2024-12-06 ] -
【Device Papers】Self-powered solar-blind photodetectors based on AlN/a-Ga₂O₃ heterojunction with nanocolumnar structure on various substrates
[ 2024-12-06 ] -
【Device Papers】How do oxygen vacancies affect carrier transport and interface states in β-Ga₂O₃/4H-SiC heterojunction photodetectors at elevated temperatures?
[ 2024-12-06 ] -
【Device Papers】Performance investigation of junction-less (JL) high-K vertical stack oxide (VSO) Ga₂O₃-FinFET for RF and linear applications
[ 2024-12-06 ]
