Paper Sharing
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【International Papers】Effects of nitrogen radical irradiation on device characteristics of vertical β-Ga₂O₃(010) FinFETs
[ 2026-06-16 ] -
【Domestic Papers】Controllable phase transition in Sn-doped Ga₂O₃ film induced by mixed nitrogen-oxygen growth atmosphere
[ 2026-06-16 ] -
【Member Papers】Electro-Thermal Improvement in a β‑Ga₂O₃ Cage-Integrated Slanted-Fin MOSFET
[ 2026-06-15 ] -
【Domestic Papers】Realization of high-performance solar-blind UV detector via a ZrO₂/Ga₂O₃/LaOₓ p-i-n heterostructure
[ 2026-06-15 ] -
【International Papers】Intrinsic Thermal Instability of δ-Ga₂O₃ Thin Films Grown via Mist Chemical Vapor Deposition
[ 2026-06-15 ] -
【Member Papers】Modulation of Microstructural Evolution and Defect States in MOCVD-Grown κ-Ga₂O₃ thin films via In Situ Annealing
[ 2026-06-12 ] -
【Member Papers】Recent advances in diamond-gallium oxide heterojunction photodetectors: a review of emerging technologies
[ 2026-06-12 ] -
【Device Papers】Inorganic Wearable β-Ga₂O₃ Single Crystal X-Ray Detector With High-Sensitivity and Stability
[ 2026-06-12 ] -
【Device Papers】Ge-Doping-Induced Phase Engineering of β/ε-Ga₂O₃ for High-Performance Ultraviolet Detector
[ 2026-06-12 ] -
【Domestic Papers】UWBG Ga₂O₃/AlN DUV Phototransistors on Si Platform for In-sensor Memory and Computing based on Polarization-Induced Carrier Separation
[ 2026-06-11 ]
