Paper Sharing
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【Device Papers】Fabrication and characterization of modulation-doped β-(AlₓGa₁₋ₓ)₂O₃/Ga₂O₃ tri-metal FET utilizing ultra-high vacuum deposition based on plasma-assisted molecular beam epitaxy
[ 2024-11-25 ] -
【Device Papers】Gallium oxide solar-blind ultraviolet photodetectors: a review
[ 2024-11-25 ] -
【Device Papers】P–Cu₂O QDs/Sn:α-Ga₂O₃ Nanorod Array for High-Sensitivity and Fast-Speed Solar-Blind Photodetectors
[ 2024-11-25 ] -
【Domestic Papers】Researchers from Nanjing University Unraveling Abnormal Thermal Quenching of Sub-Gap Emission in β-Ga₂O₃
[ 2024-11-25 ] -
【International Papers】Ultrahigh Breakdown Field in Gallium (III) Oxide Dielectric Structure Fabricated by Novel Aerosol Deposition Method
[ 2024-11-25 ] -
【Substrate Papers】Towards First-Principles Predict of Doped α-Ga₂O₃ Based Structural and Electrical Properties
[ 2024-11-25 ] -
【Substrate Papers】First-principle calculations of the electronic structure and optical properties of β-Ga₂O₃ with various vacancy defects
[ 2024-11-25 ] -
【Substrate Papers】Growth and characterization of the β-Ga₂O₃ (011) plane without line-shaped defects
[ 2024-11-25 ] -
【Domestic Papers】Research from the South China University of Technology about Ohmic Contact Formation to β-Ga₂O₃ Nanosheet Transistors with Ar-Containing Plasma Treatment
[ 2024-11-21 ] -
【Domestic Papers】Researchers from the Research Institute of Fudan University in Ningbo investigated the influence of annealing temperature on the interfacial heat transfer in pulsed laser deposition-grown Ga₂O₃ on diamond composite substrates
[ 2024-11-21 ]
