Paper Sharing
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【Device Papers】Simulation Study on the Electrical Characteristics of New Composite Terminal Structure Lateral β-Ga₂O₃ Field-Effect Transistors
[ 2026-04-23 ] -
【Member Papers】The Growth and Characterization of 6‑inch (100) β‑Ga₂O₃ Single Crystals Grown by a Casting Method
[ 2026-04-22 ] -
【International Papers】Morphology investigation of metalorganic vapor phase epitaxy homoepitaxial (001) β-Ga₂O₃ growth on on-axis and 6° off-axis substrates
[ 2026-04-22 ] -
【Epitaxy Papers】Evolution of Ga₂O₃ Thin Film Properties with Nitrogen Doping Levels
[ 2026-04-22 ] -
【Device Papers】Performance improvement of ε-Ga₂O₃ solar-blind UV photodetector via an α-Ga₂O₃ buffer layer
[ 2026-04-22 ] -
【Member Papers】Recent Breakthroughs in Gallium Oxide-Based Optoelectronic Devices for Neuromorphic Computing
[ 2026-04-21 ] -
【Member Papers】Lattice orientation preferred dual-wavelength photoresponse characteristics of β Ga₂O₃/GeO₂ heterostructures for high-performance solar-blind photodetectors
[ 2026-04-21 ] -
【Epitaxy Papers】Growth of Ga₂O₃ Thin Films by Dual-Zone LPCVD with Independent Oxygen Supply
[ 2026-04-21 ] -
【Epitaxy Papers】Heteroepitaxial integration of α-Ga₂O₃/p-NiO by mist-CVD for solar-blind UV detection
[ 2026-04-21 ] -
【Member Papers】Adduct-mediated low-temperature spatial atomic layer deposition of P-type nitrogen-doped amorphous gallium oxide thin films
[ 2026-04-20 ]
