Paper Sharing
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【Device Papers】Crystal orientation dependence of thermal conductivity and phonon transport mechanism at β-Ga₂O₃/Si heterointerface
[ 2026-11-03 ] -
【Member Papers】MSSP | Garen Semiconductor Co., Ltd., together with the Central Research Institute of China Resources Microelectronics Limited: Accurate Prediction of Thermophysical Properties Required for β-Ga₂O₃ Single-Crystal Growth Using a Neuroevolution Potential
[ 2026-11-02 ] -
【International Papers】Charge-mediated remote epitaxy of Ga₂O₃ via MoS₂
[ 2026-11-02 ] -
【Member Papers】3.23 GW/cm² power figure of merit and 0.69 V turn-on voltage β-Ga₂O₃ heterojunction barrier Schottky diodes with p-i-n junction termination
[ 2026-10-30 ] -
【International Papers】Monatomic nitrogen diffusion in β-Ga₂O₃
[ 2026-10-30 ] -
【Device Papers】Impact of p-NiO and β-Ga₂O₃ doping on the DC characteristics of enhancement-mode p-NiO/β-Ga₂O₃ HJFETs
[ 2026-10-30 ] -
【Device Papers】1.36 kV Planar-gate Ga₂O₃ CAVET with Nitrogen-Graded Multi-Implanted Current Blocking Layer
[ 2026-10-30 ] -
【Device Papers】Ga₂O₃/IGZO heterojunction-based synaptic transistor for neuromorphic visual perception
[ 2026-10-30 ] -
【Domestic Papers】Normally-Off β-Ga₂O₃ Trench-Gate Current-Aperture Vertical Electron Transistors With High-Voltage Drain-Stress Stability
[ 2026-10-29 ] -
【Domestic Papers】Single-Photon Emitters in β-Ga₂O₃ at Distinct Excitation Energies: Defect Origin and Photophysical Properties
[ 2026-10-29 ]
