Paper Sharing
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【International Papers】Low resistance Ohmic contact of multi-metallic Mo/Al/Au stack with ultra-wide bandgap Ga₂O₃ thin film with post-annealing and its in-depth interface studies for next-generation high-power devices
[ 2024-03-15 ] -
【International Papers】Electrical and optical performances investigation of planar solar blind photodetector based on IZTO/Ga₂O₃ Schottky diode via TCAD simulation
[ 2024-03-15 ] -
【International Papers】Band alignment of grafted monocrystalline Si (001)/β-Ga₂O₃ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy
[ 2024-03-15 ] -
【International Papers】A 2.8 kV Breakdown Voltage α-Ga₂O₃ MOSFET with Hybrid Schottky Drain Contact
[ 2024-03-08 ] -
【Domestic Papers】The research team of Xi'an University of Posts and Telecommunications is interested in Dual Schottky junctions coupling device based on ultra long β-Ga₂O₃ single crystal nanobelt and its photoelectric properties
[ 2024-03-08 ] -
【International Papers】Physics-based modeling of surface potential and leakage current for vertical Ga₂O₃ FinFET
[ 2024-03-07 ] -
【Domestic Papers】Regulating Photocurrent Polarity Reversal Point in α-Ga₂O₃ Nanorod Arrays for Combinational Logic Circuit Applications
[ 2024-03-07 ] -
【Domestic Papers】Effect of trimethylgallium flow rate on structural and photoelectronic properties of β-Ga₂O₃ films prepared by MOVPE
[ 2024-03-07 ] -
【Domestic Papers】Enhanced Performance of Gallium-Based Wide Bandgap Oxide Semiconductor Heterojunction Photodetector for Solar-Blind Optical Communication via Oxygen Vacancy Electrical Activity Modulation
[ 2024-03-07 ] -
【Domestic Papers】Effect of annealing temperature on solar-blind photodetectors based on 60-nm-thick Ga₂O₃ films
[ 2024-03-07 ]
