Paper Sharing
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【Member Papers】1844 V β-Ga₂O₃ Trench-MOS Schottky Barrier Diodes with Improved Electric Field of 5.2 MV/cm
[ 2025-06-20 ] -
【Member Papers】Xidian University --- Enhanced Photoelectric Performance of β-Ga₂O₃ Phototransistors via NH₃ Plasma Pretreatment for Ultra-Sensitive Solar-Blind UV Detection
[ 2025-06-18 ] -
【Domestic Papers】Harbin Institute of Technology (Shenzhen) --- A Review of ε-Ga₂O₃ Films: Fabrications and Photoelectric Properties
[ 2025-06-18 ] -
【International Papers】Thermal transport in ion-beam-exfoliated β-Ga₂O₃ nanomembranes
[ 2025-06-18 ] -
【Device Papers】1200-V/10-A Low Thermal Resistance Ga₂O₃ Schottky Barrier Diode With Composite Terminal Structure and Substrate Thinning
[ 2025-06-18 ] -
【Device Papers】Defect-modulation in α-Ga₂O₃ molecular beam epitaxial photodetector investigated through pulsed-light persistent-photoconductivity
[ 2025-06-18 ] -
【Device Papers】Gallium oxide/indium gallium zinc oxide heterojunction Schottky barrier thin-film transistors with ultrahigh 2D electron density over 6 × 10¹³/cm²
[ 2025-06-18 ] -
【Member Papers】Xi’an Jiaotong University---Mechanism of Improving Al₂O₃/β-Ga₂O₃ Interface After Supercritical Fluid Process at a Low Temperature
[ 2025-06-18 ] -
【Domestic Papers】Jimei University---Na-doped Ga₂O₃ electrolyte-gated synaptic transistors for neuromorphic computing
[ 2025-06-18 ] -
【Member Papers】Spectroscopic Calculation of Band Alignment Between High Permittivity Composites ZrSiO, AlSiO and β-Ga₂O₃
[ 2025-06-17 ]
