Paper Sharing
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【Member Papers】Design of high-efficiency Ga₂O₃-based betavoltaic battery utilizing the MG-HJ-PND structure
[ 2026-01-05 ] -
【International Papers】Epitaxial Cr₂MnO₄ p–n heterojunction to (-201) β-Ga₂O₃ deposited via off-axis magnetron sputtering
[ 2026-01-05 ] -
【Device Papers】β−Ga₂O₃ a Potential Scintillator for Photon Counting X-Ray Detectors
[ 2026-01-05 ] -
【Device Papers】Defect analysis of Sn-doped Ga₂O₃/SiC hetero-structured Schottky diodes using deep level transient spectroscopy
[ 2026-01-05 ] -
【Member Papers】High-performance and high-reliability Ga₂O₃ Schottky barrier diodes enabled by double-side packaging integrated with microchannel cooling
[ 2026-01-04 ] -
【Domestic Papers】Defect-Mediated Threshold Voltage Tuning in β-Ga₂O₃ MOSFETs via Fluorine Plasma Treatment
[ 2026-01-04 ] -
【Device Papers】β-Ga₂O₃/p-Si (100) based vertical diode deposited using RF sputtering for rectifier design
[ 2026-01-04 ] -
【Device Papers】Influence of Low-k/High-k Spacer Materials and Field Plate Engineering on the Breakdown Voltage of β-Ga₂O₃-Based LDMOSFETs
[ 2026-01-04 ] -
【Member Papers】1200 V / 10 A press-pack gallium oxide Schottky barrier diode under a quasi-uniaxial pressure of more than 20 MPa
[ 2025-12-31 ] -
【International Papers】κ-Ga₂O₃/(B)GaAs/GaAs Heterostructures: Study of Optically Active Defects, Design, and Modeling of Solar Cells Based on These Heterostructures
[ 2025-12-31 ]
