【Device Papers】Improved Electrical Performance for SiO₂/β-Ga₂O₃ (001) MIS Capacitor by Post-Deposition Annealing

      Researchers from the Hunan University have published a dissertation titled "Improved electrical performance for SiO₂/β-Ga₂O₃ (001) MIS capacitor by post-deposition annealing" in Materials Science in Semiconductor Processing.

Abstract

      In this study, we have fabricated a high-performance SiO₂/β-Ga₂O₃ (001) MIS capacitor and investigated the effect of low-temperature post-deposition annealing (PDA) on its electrical properties. The SiO₂/β-Ga₂O₃ (001) MIS capacitor exhibits improved gate leakage current and breakdown electrical field after the PDA treatment. The high-frequency capacitance-voltage hysteresis curves reveal that the fixed charge density, as well as the fast and deep near-interfacial trapped charge densities, decreases with the PDA process. We achieved an interfacial trapped charge density as low as 1.6 × 10¹¹ cm⁻² eV⁻¹ at an energy of 0.6 eV below the conduction band of β-Ga₂O₃ (001) through 400 °C annealing.

DOI：

doi.org/10.1016/j.mssp.2024.108777