【International Papers】An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties

      Researchers from the University College London have published a dissertation titled "An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties" in ACS Applied Electronic Materials.

Abstract

      Gallium oxide is a wide-bandgap compound semiconductor material renowned for its diverse applications spanning gas sensors, liquid crystal displays, transparent electrodes, and ultraviolet detectors. This paper details the aerosol assisted chemical vapor deposition synthesis of tin doped gallium oxide thin films using gallium acetylacetonate and monobutyltin trichloride dissolved in methanol. It was observed that Sn doping resulted in a reduction in the transmittance of Ga₂O₃ films within the visible spectrum, while preserving the wide bandgap characteristics of 4.8 eV. Furthermore, Hall effect testing revealed a substantial decrease in the resistivity of Sn-doped Ga₂O₃ films, reducing it from 4.2 × 10⁶ Ω cm to 2 × 10⁵ Ω cm for the 2.5 at. % Sn:Ga₂O₃ compared to the nominally undoped Ga₂O₃.

Figure 1. (a) Schematic diagram showing the process involved during aerosol assisted chemical vapor deposition (AACVD). (b) The linear relationship between the amount of MBTC in solution and the Sn concentration obtained in the doped Ga₂O₃ thin films grown via AACVD.

Figure 2. XRD patterns for the 0–6.2 at. % Sn-doped Ga₂O₃ films and quartz substrate. The calculated patterns for Ga₂O₃ and SnO₂ are also shown.

DOI：

doi.org/10.1021/acsaelm.4c00973