【International Papers】Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices

      Researchers from the Ferdinand-Braun-Institut GmbH (FBH) have published a dissertation titled "Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices" in Applied Physics Letters.

      Despite the tremendous progress on wide-bandgap materials in the last few decades, devices made of these materials are still far from their maximum theoretical performance, especially at high frequencies and voltage levels. At the same time, new ultrawide-bandgap materials have the potential to improve this performance even further, but a better understanding of mobile carrier dynamics, charge transport, electron–hole recombination, and interaction with charged defects in dependence on specific operation conditions and mission profiles is needed, including supporting modeling and simulation. This collection of papers summarizes recent progress on some of the key wide and ultra-wide bandgap semiconductor technologies, including GaN, AlGaN, AlN, Ga₂O₃, BN, and diamond for rf and power applications, as well as photonic devices. More general papers on new characterization techniques and radiation effects in semiconductors are also included as they are of general interest for all wide bandgap semiconductor device developers. The following paragraphs provide an overview on the major topics of (1) GaN based devices and materials, (2) gallium oxide devices and technologies, (3) novel wide bandgap materials, (4) diamond, (5) photonics, and (6) notable characterization methods covered by the current collection of papers on “Wide- and ultrawide-bandgap electronic semiconductor devices.”

DOI：

https://doi.org/10.1063/5.0221783