【International Papers】Charge Traps in Wide-Bandgap Semiconductors for Power Electronics Applications

      Researchers from the Universiti Teknologi PETRONAS have published a dissertation titled "Charge Traps in Wide-Bandgap Semiconductors for Power Electronics Applications" in Inorganics.

Abstract

      Wide-bandgap semiconductors have been envisioned for power electronics applications because of their ability to operate at higher temperatures and higher applied voltages without breakdown. However, the presence of defects may cause device failure, necessitating a comprehensive understanding of material defects. This review provides a fingerprint of known defects in three envisioned semiconductors for power electronics: 4H-SiC, GaN, and β-Ga₂O₃. Via a detailed discussion of defects—the origins of electrically active charge traps—through their activation energies and capture cross-sections, we provide important insights into defect parameter distributions. This review not only serves as a reference but also offers a strategic roadmap for distinguishing between similar defects. Such knowledge is key for the development of more robust and efficient power electronic devices that can fully exploit the potential of wide-bandgap semiconductors.

Figure 1. Kiviat diagram of fundamental material properties of Si, 4H-SiC, GaN, and β-Ga₂O₃. All parameters are normalised to illustrate the tendency.

Figure 2. Charge traps in 4H-SiC plotted as capture cross-sections as a function of the trap activation energies. Activation energies and capture cross-sections are from reported data.

DOI：

https://doi.org/10.3390/inorganics12100257