【Domestic Papers】Growth process, defects, and dopants of bulk β-Ga₂O₃ semiconductor single crystals

      Researchers from the Tsinghua University have published a dissertation titled "Growth process, defects, and dopants of bulk β-Ga₂O₃ semiconductor single crystals" in China Foundry.

Abstract

      β-gallium oxide (β-Ga₂O₃), as the typical representative of the fourth generation of semiconductors, has attracted increasing attention owing to its ultra-wide bandgap, superior optical properties, and excellent tolerance to high temperature and radiation. Compared to the single crystals of other semiconductors, high-quality and large-size β-Ga₂O₃ single crystals can be grown with low-cost melting methods, making them highly competitive. In this review, the growth process, defects, and dopants of β-Ga₂O₃ are primarily discussed. Firstly, the growth process (e.g., decomposition, crucible corrosion, spiral growth, and development) of β-Ga₂O₃ single crystals are summarized and compared in detail. Then, the defects of β-Ga₂O₃ single crystals and the influence of defects on Schottky barrier diode (SBD) devices are emphatically discussed. Besides, the influences of impurities and intrinsic defects on the electronic and optical properties of β-Ga₂O₃ are also briefly discussed. Concluding this comprehensive analysis, the article offers a concise summary of the current state, challenges and prospects of β-Ga₂O₃ single crystals.

Fig. 1: Phase transformation of Ga₂O₃

Fig. 2: Development of β-Ga₂O₃ single crystal growth at home and abroad

DOI：

doi.org/10.1007/s41230-024-4131-5