【Device Papers】GLAD synthesized Ga₂O₃ nanowire-based photodiode

      Researchers from the National Institute of Technology Durgapur have published a dissertation titled "GLAD synthesized Ga₂O₃ nanowire-based photodiode" in Applied Physics A.

Abstract

      Ga₂O₃ nanowire arrays were fabricated on silicon substrates using a combination of e-beam evaporation and glancing angle deposition (GLAD). Microscopic imaging and energy dispersive X-ray (EDX) mapping confirmed the formation of nanowire-like structures with precise stoichiometry. X-ray diffraction verified the crystalline β-Ga₂O₃ structure. Optical bandgap values of 3.2 eV and 4.5 eV were determined through UV–Vis absorption spectroscopy utilizing Tauc’s plot. The optoelectronic properties of an Au/Ga₂O₃ nanowire/p-Si/In device were assessed via current-voltage (I-V) measurements, with a free carrier concentration (N_d) of 5.6×10¹⁷cm⁻³ obtained from capacitance-voltage (C-V) measurements. Temperature-dependent I-V characteristics revealed a decrease in Ideality factor and series resistance with increasing temperature, along with an increase in barrier height, indicating barrier inhomogeneities. Wavelength-dependent responsivity and detectivity measurements demonstrated enhanced performance in the UV (~ 300 nm) and near-UV (~ 400 nm) regions. In the UV region, the device exhibited responsivity values of 2.29 A/W and 6.54 A/W, and detectivity values of 2.51 × 10⁹ Jones and 8.64 × 10⁹ Jones, respectively.

DOI：

https://doi.org/10.1007/s00339-024-07917-6