【International Papers】Pseudo-source gated beta-gallium oxide MOSFET

      Researchers from the King Abdullah University of Science and Technology (KAUST) have published a dissertation titled "Pseudo-source gated beta-gallium oxide MOSFET" in Applied Physics Letters.

Abstract

      This study demonstrates pseudo-source-gated beta-gallium oxide (β-Ga₂O₃) metal oxide semiconductor field effect transistors (MOSFETs). The proposed pseudo-source gated transistor (pseudo-SGT) architecture has a thin (∼11 nm) recessed channel design, effectively emulating conventional SGT characteristics without significantly compromising on-current. The fabricated devices exhibit remarkable intrinsic gain of 10⁴, low output conductance of 10⁻⁸ S/mm, transconductance of 10⁻³ S/mm, and drain saturation voltage of ∼1.5 V, while maintaining a drain current of 1.3 mA/mm. These enhanced performance metrics significantly expand the potential of β-Ga₂O₃ MOSFETs for the development of Ga₂O₃ monolithic power integrated circuits.

FIG. 1. (a) Scanning electron microscope (SEM) image of the fabricated device. (b) Magnified image highlighting the dimensions of gate area. (c) Cross-sectional schematic of the fabricated device.

FIG. 2. TLM structure measurement results. (a) I–V characteristics showing an Ohmic contact and (b) R_C calculated from the resistance vs spacing plot.

DOI：

https://doi.org/10.1063/5.0231763