【Device Papers】High external quantum efficiency photodetector based on Ga₂O₃ / CH₃NH₃PbI₃

      Researchers from the Changchun University of Science and Technology have published a dissertation titled " High external quantum efficiency photodetector based on Ga₂O₃/CH₃NH₃PbI₃" in Applied Surface Science.

Abstract

      In this paper, Ga₂O₃/CH₃NH₃PbI₃ photodetector (PD) with high external quantum efficiency (EQE) was successfully prepared by spin coating CH₃NH₃PbI₃ on the film surface of Ga₂O₃/Au MSM PD. Compared with Ga₂O₃ film device, the dark current of heterojunction device decreased from 5.20 to 0.09nA, and the responsivity increased from 0.18 to 14.01 A/W at 40 V bias. It is worth noting that under the same bias voltage (40 V), the EQE of Ga₂O₃/CH₃NH₃PbI₃ PD is as high as 6686 %, which is 78 times of Ga₂O₃/Au PD (85.89 %). The high EQE is attributed to collision ionization doubling caused by the effect of an applied electric field. In addition, the construction of heterojunction speeds up the response speed of PD. This work has important implications for the selection of heterogeneous materials and the construction of PDs to optimize device performance.

DOI：

https://doi.org/10.1016/j.apsusc.2024.161508