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【International Papers】KAUST Has Developed the First Gallium Oxide Monolithic Bidirectional Switch
日期：2024-12-11阅读：170
Researchers from the King Abdullah University of Science and Technology have published a dissertation titled "Demonstration of normally OFF beta-gallium oxide monolithic bidirectional switch for AC switching applications" in Applied Physics Letters.
Abstract
In this work, we report on the beta-gallium oxide (β-Ga2O3) monolithic bidirectional switch. The as-fabricated switch works on enhancement mode operation with a threshold voltage of ∼4 V. Maximum drain current density of 1.93 mA/mm is obtained with a drain voltage of 5 V. The bidirectional switch in a bidirectional mode has an ON/OFF current ratio of ∼107 with ON-resistance of 1.11 and 1.09 kΩ · mm in forward and reverse direction, respectively. However, in diode mode, the device shows an ON/OFF current ratio of 1.6 × 108 and 1.4 × 108 in forward and reverse conduction modes, respectively. The fabricated β-Ga2O3 monolithic bidirectional switch is then used to chop a 60 Hz Alternating Current signal at a chopping frequency of 1 kHz, indicating its potential applications in a range of converters.
FIG. 1. (a) Schematic of the β-Ga2O3 epitaxy. (b) Fabrication flow of β-Ga2O3 monolithic bidirectional switch. (c) Schematic of the β-Ga2O3 monolithic bidirectional switch. (d) SEM image of the fabricated β-Ga2O3 monolithic bidirectional switch (channel width = 400 μm).
FIG. 2. Various modes of operation of monolithic bidirectional switch: (a) Bidirectional conduction mode. (b) Bidirectional blocking mode. (c) Forward conduction and reverse blocking mode. (d) Reverse conduction and forward blocking mode.
DOI：
doi.org/10.1063/5.0237484
