【Device Papers】High temperature operation of Al₂O₃/Ga₂O₃ bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage

      Researchers from the King Abdullah University of Science and Technology (KAUST) have published a dissertation titled " High temperature operation of Al₂O₃/Ga₂O₃ bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage " in Japanese Journal of Applied Physics.

Abstract

      In this work, we report the reduced gate leakage current by using aluminum oxide (Al₂O₃) and gallium oxide (Ga₂O₃) as a bi-layer gate stack for GaN MOS-HEMT on a silicon substrate up to 450 °C. The bi-layer gate stack MOS-HEMTs suppressed the gate leakage by more than four orders of magnitude compared to only Al₂O₃-based GaN MOS-HEMT at 450 °C. The low gate leakage current is attributed to the reduced oxygen vacancies present in the Ga₂O₃ layer, which effectively impede the conduction path of the Poole-Frenkel emission at high temperatures, thereby enhancing the overall performance of GaN HEMTs.

DOI：

https://doi.org/10.35848/1347-4065/ad8714