【Epitaxy Papers】Evaluating the mechanical stability and flexibility of Ga₂O₃ films on mica substrates via Pulsed Laser deposition and CASTEP simulations

      Researchers from the Guilin University of Electronic Technology have published a dissertation titled "Evaluating the mechanical stability and flexibility of Ga₂O₃ films on mica substrates via Pulsed Laser deposition and CASTEP simulations" in Journal of Crystal Growth.

Abstract

      This research analyzes the mechanical stability and flexibility of Ga₂O₃ films on mica substrates, advancing material science. Integrating Cambridge Sequential Total Energy Package (CASTEP) simulations with Pulsed Laser Deposition (PLD) reveals β-Ga₂O₃′s electronic structure and wide bandgap of 4.98 eV. X-ray diffraction (XRD) analysis indicates a significant increase in crystallite size from 26 nm to 152 nm as the substrate temperature increased from 500 °C to 800 °C. Scanning Electron Microscopy (SEM) images show enhanced grain size and defined boundaries at higher temperatures. The mechanical properties, including a bulk modulus of 201.35 GPa, shear modulus of 97.52 GPa, and Young’s modulus of 251.90 GPa, confirm the material’s strong mechanical stability. These properties suggest that Ga₂O₃ films suit high-stress and flexible electronic applications. This study bridges theoretical predictions with empirical observations, contributing to developing Ga₂O₃-based materials for next-generation technologies. 

DOI：

https://doi.org/10.1016/j.jcrysgro.2024.127900