【Device Papers】AlN/β-Ga₂O₃ HEMT for Low-Noise Amplifier

      Researchers from the Birla Institute of Technology and Science Pilani have published a dissertation titled "AlN/β-Ga₂O₃ HEMT for Low-Noise Amplifier" in Emerging VLSI Devices, Circuits and Architectures.

Abstract

      This study proposes an AlN/β-Ga₂O₃ high electron mobility transistor (HEMT) using a 0.10 µm gate length where AIN is used as a barrier and β-Ga₂O₃ as a channel material. DC and Noise characteristics of AlN/Ga₂O₃ with different AIN barrier thicknesses at 1–20 GHz microwave frequencies have been explored. The simulation has been performed using the Silvaco TCAD software. The device has exhibited a high unity current gain cut-off frequency (f_t) of 100 GHz and extrinsic transconductance of 255 mS/mm. Also, the device showed current drive capability as high as 2000 mA/mm. The microwave noise characteristics of the device were investigated from 0 to 20 GHz with respect to different gate bias voltages and drain currents. At a gate bias of −2 V and drain bias of 15 V, the device has shown a minimum noise figure (F_min) of 0.71 dB and max unilateral power gain (GU_max) of 24 dB at 10 GHz. Also, it shows a noise resistance of 47.94 KΏ at 10 GHz, which is very appropriate for low-noise applications in the X-band frequency range. These findings indicate the expertise of AlN/Ga₂O₃ in the field of low-noise and high-power amplifiers.

DOI：

https://doi.org/10.1007/978-981-97-5269-0_25