【International Papers】Luminescence properties of dislocations in α-Ga₂O₃

      Researchers from the University of Strathclyde have published a dissertation titled "Luminescence properties of dislocations in α-Ga₂O₃" in Journal of Physics D: Applied Physics.

Abstract

      Dislocations in epitaxial lateral overgrown α-Ga₂O₃ are investigated using hyperspectral cathodoluminescence spectroscopy. The dislocations are associated with a reduction of self-trapped hole related luminescence (ca. 3.6 eV line) which can be ascribed to their actions as non-radiative recombination sites for free electrons, to a reduction in free electron density due to Fermi level pinning or to electron trapping at donor states. An increase in the intensity of the ca. 2.8 eV and 3.2 eV lines is observed at the dislocations, suggesting an increase in donor-acceptor pair transitions and providing strong evidence that point defects segregate at dislocations.

DOI：

https://doi.org/10.1088/1361-6463/ad8894