【Domestic Papers】Researchers Led by Academician Deren Yang from the Zhejiang University——Growth and Properties of 2-Inch Fe-Doped (010) β-Ga₂O₃ Single Crystal Substrates

      Researchers led by Academician Deren Yang from the Zhejiang University have published a dissertation titled "Growth and Properties of 2-Inch Fe-Doped (010) β-Ga₂O₃ Single Crystal Substrates" in Journal of Synthetic Crystals.

Abstract

      In this work, large-size Fe-doped β-Ga₂O₃ single crystals were grown by Czochralski method. 2-inch (010)-plane substrates were fabricated, and the crystal quality, processing quality and electrical properties of these substrates were examined. The uniform appearance of the substrates under the polarizing strain gauge indicates the absence of twinning, cracks and other macrocopic defects, confirming their good macrocrystalline quality. The full width at half maximum (FWHM) of the X-ray rocking curve of (020) plane for these substrates is less than 29.7″, reflecting good microcrystalline quality. The surface average roughness (Ra) of the substrates is less than 0.240 nm, with a local thickness variation less than 1.8 μm, a total thickness variation of 5.091 μm, and a warp of 3.132 μm, suggesting superior substrate processing quality. Furthermore, the electrical resistivity of the substrate is ~7×10¹¹ Ω·cm, facilitating the development of the microwave and radio frequency devices.