【Epitaxy Papers】Thick β-Ga₂O₃ homoepitaxial films grown on（-201）substrate by mist-CVD

      Researchers from the Ioffe Institute have published a dissertation titled "Thick β-Ga₂O₃ homoepitaxial films grown on（-201）substrate by mist-CVD" in Materials Today Communications.

Abstract

      Thick β-Ga₂O₃ homoepitaxial films have been grown on (-201) commercial substrates by mist-CVD with gallium acetylacetonate precursor for the first time. The growth rate of about 2 μm/h has been reached, which is unavailable for any other known epitaxial technique. The layer is characterized by the constant thickness and reasonable structure quality due to low stressed interface.

DOI：

https://doi.org/10.1016/j.mtcomm.2024.110970