【Device Papers】Electrostatic discharge protection of low-voltage circuits by forward characteristics of wide bandgap semiconductor Schottky barrier diodes

      Researchers from the Otowa electric co., ltd. have published a dissertation titled "Electrostatic discharge protection of low-voltage circuits by forward characteristics of wide bandgap semiconductor Schottky barrier diodes" in Japanese Journal of Applied Physics.

Abstract

      As a component protecting low-voltage (1-3 V) circuits against disturbance pulses such as electro-static discharge, we propose the application of the forward characteristics of wide bandgap semiconductor Schottky barrier diodes (SBDs). This concept was verified with β-Ga₂O₃-SBDs, which successfully kept the line voltage to 2.2~4.2 V for an input pulse voltage of 5~70 V with a rise time of less than 1 ns. This indicates that it is applicable for protection against nanosecond-level disturbance pulses.

DOI：

https://doi.org/10.35848/1347-4065/ad92eb